IPB60R070CFD7 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB60R070CFD7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 156 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 31 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 23 nS
Cossⓘ - Capacitancia de salida: 53 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de IPB60R070CFD7 MOSFET
- Selecciónⓘ de transistores por parámetros
IPB60R070CFD7 datasheet
..1. Size:1252K infineon
ipb60r070cfd7.pdf 
IPB60R070CFD7 MOSFET D PAK 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications s
7.1. Size:1359K infineon
ipb60r045p7.pdf
IPB60R045P7 MOSFET D PAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS
7.3. Size:1375K infineon
ipb60r099p7.pdf
IPB60R099P7 MOSFET D PAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS
7.4. Size:421K infineon
ipb60r099cpa.pdf
IPB60R099CPA CoolMOS Power Transistor Product Summary V 600 V DS R 0.105 DS(on),max Q 60 nC g,typ Features Worldwide best Rds,on in TO263 PG-TO263-3-2 Ultra low gate charge Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) CoolMOS CPA is specially designed for DC/DC converters for A
7.5. Size:1204K infineon
ipb60r099c7.pdf
IPB60R099C7 MOSFET D PAK 600V CoolMOS C7 Power Transistor CoolMOS C7 is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. 2 1 The 600V C7 is the first technolo
7.6. Size:1172K infineon
ipb60r060p7.pdf
IPB60R060P7 MOSFET D PAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS
7.7. Size:1393K infineon
ipb60r060c7.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPB60R060C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPB60R060C7 D PAK 1 Description CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and ta
7.8. Size:1255K infineon
ipb60r090cfd7.pdf
IPB60R090CFD7 MOSFET D PAK 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications s
7.9. Size:1273K infineon
ipb60r040cfd7.pdf
IPB60R040CFD7 MOSFET D PAK 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications s
7.11. Size:1209K infineon
ipb60r040c7.pdf
IPB60R040C7 MOSFET D PAK 600V CoolMOS C7 Power Transistor CoolMOS C7 is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. 2 1 The 600V C7 is the first technolo
7.12. Size:2087K infineon
ipa60r099c6 ipb60r099c6 ipp60r099c6 ipw60r099c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the supe
7.13. Size:1351K infineon
ipb60r080p7.pdf
IPB60R080P7 MOSFET D PAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS
7.14. Size:258K inchange semiconductor
ipb60r099cp.pdf
Isc N-Channel MOSFET Transistor IPB60R099CP FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
7.15. Size:258K inchange semiconductor
ipb60r099p7.pdf
Isc N-Channel MOSFET Transistor IPB60R099P7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
7.16. Size:258K inchange semiconductor
ipb60r099c7.pdf
Isc N-Channel MOSFET Transistor IPB60R099C7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
7.17. Size:258K inchange semiconductor
ipb60r060p7.pdf
Isc N-Channel MOSFET Transistor IPB60R060P7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
7.18. Size:258K inchange semiconductor
ipb60r060c7.pdf
Isc N-Channel MOSFET Transistor IPB60R060C7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
7.19. Size:258K inchange semiconductor
ipb60r099c6.pdf
Isc N-Channel MOSFET Transistor IPB60R099C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
7.20. Size:258K inchange semiconductor
ipb60r040c7.pdf
Isc N-Channel MOSFET Transistor IPB60R040C7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
7.21. Size:258K inchange semiconductor
ipb60r080p7.pdf
Isc N-Channel MOSFET Transistor IPB60R080P7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
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