IPB60R170CFD7 Todos los transistores

 ..1. Size:1241K  infineon
 ipb60r170cfd7.pdf

IPB60R170CFD7 MOSFET D PAK 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications s

 7.1. Size:1019K  infineon
 ipa60r160c6 ipb60r160c6 ipp60r160c6 ipw60r160c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunct

 7.2. Size:427K  infineon
 ipb60r199cpa.pdf

IPB60R199CPA CoolMOS Power Transistor Product Summary V 600 V DS R 0.199 DS(on),max Q 33 nC g,typ Features Lowest figure-of-merit Ron x Qg Ultra low gate charge Extreme dv/dt rated PG-TO263-3 High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) CoolMOS CPA is specially designed for DC/DC converters for Auto

 7.3. Size:1377K  infineon
 ipb60r120c7.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPB60R120C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPB60R120C7 D PAK 1 Description CoolMOS C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and ta

 7.4. Size:1723K  infineon
 ipb60r160c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R160C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6 IPP60R160C6 IPW60R160C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superj

 7.5. Size:348K  infineon
 ipb60r165cp.pdf

IPB60R165CP CoolMOS Power Transistor Product Summary Features V @ Tj,max 650 V DS Lowest figure-of-merit RONxQg R 0.165 DS(on),max Ultra low gate charge Q 39 nC g,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications PG-TO263 Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed

 7.6. Size:1396K  infineon
 ipb60r125c6.pdf

MOSFET + =L9D - PA

 7.7. Size:1128K  infineon
 ipb60r180p7.pdf

IPB60R180P7 MOSFET D PAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS

 7.8. Size:931K  infineon
 ipb60r125cp.pdf

IPB60R125CP CoolMOSTM Power Transistor Product Summary Features V @ Tj,max 650 V DS Lowest figure-of-merit RONxQg R 0.125 DS(on),max Ultra low gate charge Q 53 nC g,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications PG-TO263 Pb-free lead plating; RoHS compliant CoolMOS CP is specially designe

 7.9. Size:2645K  infineon
 ipw60r160p6 ipb60r160p6 ipp60r160p6 ipa60r160p6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R160P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R160P6, IPB60R160P6, IPP60R160P6, IPA60R160P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs,

 7.10. Size:1214K  infineon
 ipa60r190c6 ipb60r190c6 ipi60r190c6 ipp60r190c6 ipw60r190c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to

 7.11. Size:1211K  infineon
 ipb60r180c7.pdf

IPB60R180C7 MOSFET D PAK 600V CoolMOS C7 Power Transistor CoolMOS C7 is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. 600V CoolMOS C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. 2 1 The 600V C7 is the first technolo

 7.12. Size:1495K  infineon
 ipb60r190c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according

 7.13. Size:3091K  infineon
 ipw60r190p6 ipb60r190p6 ipp60r190p6 ipa60r190p6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R190P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R190P6, IPB60R190P6, IPP60R190P6, IPA60R190P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs,

 7.14. Size:1238K  infineon
 ipb60r125cfd7.pdf

IPB60R125CFD7 MOSFET D PAK 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications s

 7.15. Size:360K  infineon
 ipb60r199cp.pdf

IPB60R199CP CoolMOS Power Transistor Product Summary Features V @ Tj,max 650 V DS Lowest figure-of-merit RONxQg R 0.199 DS(on),max Ultra low gate charge Q 32 nC g,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications PG-TO263 Pb-free lead plating; RoHS compliant CoolMOS CP is specially designe

 7.16. Size:1257K  infineon
 ipa60r125c6 ipb60r125c6 ipp60r125c6 ipw60r125c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R125C6 Data Sheet Rev. 2.3 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPA60R125C6, IPB60R125C6 IPP60R125C6 IPW60R125C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according to the superj

 7.17. Size:1310K  infineon
 ipb60r120p7.pdf

IPB60R120P7 MOSFET D PAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS

 7.18. Size:357K  infineon
 ipb60r125cpa.pdf

IPB60R125CP CoolMOSTM Power Transistor Product Summary Features V @ Tj,max 650 V DS Lowest figure-of-merit RONxQg R 0.125 DS(on),max Ultra low gate charge Q 53 nC g,typ Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications PG-TO263 Pb-free lead plating; RoHS compliant CoolMOS CP is specially designe

 7.19. Size:568K  infineon
 ipb60r199cp a.pdf

IPB60R199CP C IMOS # A0

 7.20. Size:258K  inchange semiconductor
 ipb60r190p6.pdf

Isc N-Channel MOSFET Transistor IPB60R190P6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 7.21. Size:258K  inchange semiconductor
 ipb60r160c6.pdf

Isc N-Channel MOSFET Transistor IPB60R160C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 7.22. Size:227K  inchange semiconductor
 ipb60r165cp.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB60R165CP FEATURES With TO-263(D2PAK) packaging Ultra-fast body diode High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages, hard switching PWM stages and resonant sw

 7.23. Size:258K  inchange semiconductor
 ipb60r125c6.pdf

Isc N-Channel MOSFET Transistor IPB60R125C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 7.24. Size:258K  inchange semiconductor
 ipb60r160p6.pdf

Isc N-Channel MOSFET Transistor IPB60R160P6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 7.25. Size:258K  inchange semiconductor
 ipb60r180p7.pdf

Isc N-Channel MOSFET Transistor IPB60R180P7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 7.26. Size:258K  inchange semiconductor
 ipb60r125cp.pdf

Isc N-Channel MOSFET Transistor IPB60R125CP FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 7.27. Size:258K  inchange semiconductor
 ipb60r180c7.pdf

Isc N-Channel MOSFET Transistor IPB60R180C7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 7.28. Size:205K  inchange semiconductor
 ipb60r190c6.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB60R190C6 FEATURES With TO-263(D2PAK) packaging Ultra-fast body diode High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages, hard switching PWM stages and resonant sw

 7.29. Size:258K  inchange semiconductor
 ipb60r199cp.pdf

Isc N-Channel MOSFET Transistor IPB60R199CP FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V

 7.30. Size:258K  inchange semiconductor
 ipb60r120p7.pdf

Isc N-Channel MOSFET Transistor IPB60R120P7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V