IPB60R210CFD7 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPB60R210CFD7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 64 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 16.5 nS
Cossⓘ - Capacitancia de salida: 18 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.21 Ohm
Encapsulados: TO263
Búsqueda de reemplazo de IPB60R210CFD7 MOSFET
- Selecciónⓘ de transistores por parámetros
IPB60R210CFD7 datasheet
..1. Size:1226K infineon
ipb60r210cfd7.pdf 
IPB60R210CFD7 MOSFET D PAK 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications s
7.1. Size:2632K infineon
ipb60r230p6 ipw60r230p6 ipb60r230p6 ipp60r230p6 ipa60r230p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R230P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R230P6, IPB60R230P6, IPP60R230P6, IPA60R230P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs,
7.2. Size:554K infineon
ipb60r299cp.pdf
IPB60R299CP C IMOSTM # A0 9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound 7!"%
7.3. Size:529K infineon
ipb60r250cp.pdf
IPB60R250CP C IMOSTM # A0 9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound 7!
7.4. Size:3109K infineon
ipw60r230p6 ipb60r230p6 ipp60r230p6 ipa60r230p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R230P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R230P6, IPB60R230P6, IPP60R230P6, IPA60R230P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs,
7.5. Size:1120K infineon
ipb60r280p7.pdf
IPB60R280P7 MOSFET D PAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS
7.7. Size:2608K infineon
ipb60r280p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R280P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R280P6, IPB60R280P6, IPP60R280P6, IPA60R280P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs,
7.8. Size:2621K infineon
ipw60r280p6 ipb60r280p6 ipp60r280p6 ipa60r280p6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R280P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R280P6, IPB60R280P6, IPP60R280P6, IPA60R280P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs,
7.9. Size:426K infineon
ipb60r299cpa.pdf
IPB60R299CPA CoolMOSTM Power Transistor Product Summary V 600 V DS R 0.299 DS(on),max Q 22 nC g,typ Features Lowest figure-of-merit Ron x Qg PG-TO263-3 Ultra low gate charge Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) CoolMOS CPA is specially designed for DC/DC converters for Aut
7.10. Size:1587K infineon
ipa60r280c6 ipb60r280c6 ipi60r280c6 ipp60r280c6 ipw60r280c6.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPx60R280C6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V C IMOS C6 P wer Transist r IPA60R280C6, IPB60R280C6 IPI60R280C6, IPP60R280C6 IPW60R280C6 1 Descripti n CoolMOS is a revolutionary technology for high voltage power MOSFETs designed according
7.11. Size:258K inchange semiconductor
ipb60r299cp.pdf
Isc N-Channel MOSFET Transistor IPB60R299CP FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
7.12. Size:258K inchange semiconductor
ipb60r250cp.pdf
Isc N-Channel MOSFET Transistor IPB60R250CP FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
7.13. Size:258K inchange semiconductor
ipb60r230p6.pdf
Isc N-Channel MOSFET Transistor IPB60R230P6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
7.14. Size:258K inchange semiconductor
ipb60r280p7.pdf
Isc N-Channel MOSFET Transistor IPB60R280P7 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
7.15. Size:258K inchange semiconductor
ipb60r280c6.pdf
Isc N-Channel MOSFET Transistor IPB60R280C6 FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source V
7.16. Size:205K inchange semiconductor
ipb60r280p6.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPB60R280P6 FEATURES With TO-263(D2PAK) packaging Ultra-fast body diode High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T
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