IPB65R115CFD7A Todos los transistores

 

IPB65R115CFD7A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPB65R115CFD7A
   Código: 65A115F7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 114 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 21 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 41 nC
   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 29 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm
   Paquete / Cubierta: TO263

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IPB65R115CFD7A Datasheet (PDF)

 ..1. Size:1411K  infineon
ipb65r115cfd7a.pdf

IPB65R115CFD7A
IPB65R115CFD7A

IPB65R115CFD7AMOSFETDPAK650V CoolMOS CFD7A SJ Power Device650V CoolMOS CFD7A is Infineon's latest generation of market leadingtabautomotive qualified high voltage CoolMOS MOSFETs. In addition to thewell-known attributes of high quality and reliability required by theautomotive industry, the new CoolMOS CFD7A series provides for anintegrated fast body diode and can

 6.1. Size:3853K  infineon
ipw65r110cfd ipb65r110cfd ipp65r110cfd ipa65r110cfd ipi65r110cfd.pdf

IPB65R115CFD7A
IPB65R115CFD7A

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R110CFDData SheetRev. 2.6FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R110CFD, IPB65R110CFD, IPP65R110CFDIPA65R110CFD, IPI65R110CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage pow

 6.2. Size:3828K  infineon
ipa65r110cfd ipb65r110cfd ipi65r110cfd ipp65r110cfd ipw65r110cfd.pdf

IPB65R115CFD7A
IPB65R115CFD7A

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R110CFDData SheetRev. 2.6FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R110CFD, IPB65R110CFD, IPP65R110CFDIPA65R110CFD, IPI65R110CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage pow

 6.3. Size:2288K  infineon
ipb65r110cfda ipp65r110cfda ipw65r110cfda.pdf

IPB65R115CFD7A
IPB65R115CFD7A

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R110CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R110CFDA, IPB65R110CFDAIPP65R110CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the sup

 6.4. Size:2324K  infineon
ipw65r110cfda ipb65r110cfda ipp65r110cfda.pdf

IPB65R115CFD7A
IPB65R115CFD7A

MOSFETMetal Oxide Semiconductor Field Effect TransistorCFDA Automotive650V CoolMOS CFDA Power TransistorIPx65R110CFDA Data SheetRev. 2.0FinalAutomotive650V CoolMOS CFDA Power TransistorIPW65R110CFDA, IPB65R110CFDAIPP65R110CFDATO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the sup

 6.5. Size:205K  inchange semiconductor
ipb65r110cfd.pdf

IPB65R115CFD7A
IPB65R115CFD7A

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB65R110CFDFEATURESWith TO-263(D2PAK) packagingUltra-fast body diodeHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

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