IPB70N12S3-11 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPB70N12S3-11

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 70 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 940 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0113 Ohm

Encapsulados: TO263

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IPB70N12S3-11 datasheet

 ..1. Size:405K  infineon
 ipb70n12s3-11 ipi70n12s3-11 ipp70n12s3-11.pdf pdf_icon

IPB70N12S3-11

IPB70N12S3-11 IPI70N12S3-11, IPP70N12S3-11 OptiMOS -T Power-Transistor Product Summary VDS 120 V RDS(on),max (SMD version) 11.3 mW ID 70 A Features OptiMOSTM - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temperatur

 7.1. Size:124K  infineon
 ipi70n10sl-16 ipp70n10sl-16 ipb70n10sl-16 ipp70n10sl-16 ipb70n10sl-16 ipi70n10sl-16.pdf pdf_icon

IPB70N12S3-11

IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 SIPMOS Power-Transistor Product Summary Feature VDS 100 V N-Channel RDS(on) 16 m Enhancement mode ID 70 A Logic Level P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 175 C operating temperature Avalanche rated 2 dv/dt rated 3 2 Green Package 1 (lead free) P-TO220-3-1 Type Package Ordering Code Marking IPP7

 7.2. Size:186K  infineon
 ipb70n10s3-12 ipi70n10s3-12 ipp70n10s3-12 ipp70n10s3 ipb70n10s3 ipi70n10s3-12.pdf pdf_icon

IPB70N12S3-11

IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 OptiMOS -T Power-Transistor Product Summary V 100 V DS R (SMD version) 11.3 m DS(on),max I 70 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanc

 7.3. Size:160K  infineon
 ipb70n10s3l-12 ipi70n10s3l-12 ipp70n10s3l-12.pdf pdf_icon

IPB70N12S3-11

IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 OptiMOS -T Power-Transistor Product Summary V 100 V DS R (SMD version) 12 mW DS(on),max I 70 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche

MOSTRAR MÁS

Otros transistores... IPB60R070CFD7, IPB60R090CFD7, IPB60R120C7, IPB60R125CFD7, IPB60R170CFD7, IPB60R210CFD7, IPB60R360CFD7, IPB65R115CFD7A, IRF9540, IPB80N08S4-06, IPB80P04P4-07, IPB80P04P4L-04, IPB80P04P4L-08, IPC100N04S5-1R2, IPC100N04S5-1R9, IPC100N04S5-2R8, IPC100N04S5L-1R1