IPC100N04S5L-2R6 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPC100N04S5L-2R6

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 75 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3 nS

Cossⓘ - Capacitancia de salida: 510 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm

Encapsulados: TDSON-8-33

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IPC100N04S5L-2R6 datasheet

 0.1. Size:396K  infineon
 ipc100n04s5l-2r6.pdf pdf_icon

IPC100N04S5L-2R6

IPC100N04S5L-2R6 OptiMOS -5 Power-Transistor Product Summary VDS 40 V RDS(on),max 2.6 mW ID 100 A Features PG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanc

 1.1. Size:422K  infineon
 ipc100n04s5l-1r1.pdf pdf_icon

IPC100N04S5L-2R6

IPC100N04S5L-1R1 OptiMOS -5 Power-Transistor Product Summary VDS 40 V RDS(on),max 1.1 mW ID 100 A Features PG-TDSON-8-34 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalan

 1.2. Size:421K  infineon
 ipc100n04s5l-1r9.pdf pdf_icon

IPC100N04S5L-2R6

IPC100N04S5L-1R9 OptiMOS -5 Power-Transistor Product Summary VDS 40 V RDS(on),max 1.9 mW ID 100 A Features PG-TDSON-8-34 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalan

 1.3. Size:457K  infineon
 ipc100n04s5l-1r5.pdf pdf_icon

IPC100N04S5L-2R6

IPC100N04S5L-1R5 OptiMOS -5 Power-Transistor Product Summary VDS 40 V RDS(on),max 1.5 mW ID 100 A Features PG-TDSON-8-34 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260 C peak reflow 1 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalan

MOSTRAR MÁS

Otros transistores... IPB80P04P4L-04, IPB80P04P4L-08, IPC100N04S5-1R2, IPC100N04S5-1R9, IPC100N04S5-2R8, IPC100N04S5L-1R1, IPC100N04S5L-1R5, IPC100N04S5L-1R9, 4435, IPC50N04S5-5R8, IPC50N04S5L-5R5, IPC70N04S5-4R6, IPC70N04S5L-4R2, IPC90N04S5-3R6, IPC90N04S5L-3R3, IPD090N03LGE8177, IPD100N04S4L-02