IPC100N04S5L-2R6 Todos los transistores

 

IPC100N04S5L-2R6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPC100N04S5L-2R6
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 16 V
   |Id|ⓘ - Corriente continua de drenaje: 100 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 510 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
   Paquete / Cubierta: TDSON-8-33

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IPC100N04S5L-2R6 Datasheet (PDF)

 0.1. Size:396K  infineon
ipc100n04s5l-2r6.pdf

IPC100N04S5L-2R6
IPC100N04S5L-2R6

IPC100N04S5L-2R6OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 2.6 mW ID 100 A FeaturesPG-TDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalanc

 1.1. Size:422K  infineon
ipc100n04s5l-1r1.pdf

IPC100N04S5L-2R6
IPC100N04S5L-2R6

IPC100N04S5L-1R1OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 1.1 mW ID 100 A FeaturesPG-TDSON-8-34 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalan

 1.2. Size:421K  infineon
ipc100n04s5l-1r9.pdf

IPC100N04S5L-2R6
IPC100N04S5L-2R6

IPC100N04S5L-1R9OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 1.9 mW ID 100 A FeaturesPG-TDSON-8-34 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalan

 1.3. Size:457K  infineon
ipc100n04s5l-1r5.pdf

IPC100N04S5L-2R6
IPC100N04S5L-2R6

IPC100N04S5L-1R5OptiMOS-5 Power-TransistorProduct Summary VDS 40 V RDS(on),max 1.5 mW ID 100 A FeaturesPG-TDSON-8-34 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified MSL1 up to 260C peak reflow1 175C operating temperature1 Green Product (RoHS compliant) 100% Avalan

Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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