STD2N50-1 Todos los transistores

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STD2N50-1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STD2N50-1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 45 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 2.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Conductancia de drenaje-sustrato (Cd): 270 pF

Resistencia drenaje-fuente RDS(on): 5.5 Ohm

Empaquetado / Estuche: IPAK

Búsqueda de reemplazo de MOSFET STD2N50-1

 

STD2N50-1 Datasheet (PDF)

3.1. std2n50.pdf Size:174K _st

STD2N50-1
STD2N50-1

STD2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD2N50 500 V < 5.5 ? 2 A TYPICAL R = 4.5 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 APPLICATION ORIENTED 3 2 CHARACTERIZATION 1 1 THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX -1) SURFACE-MOUNTING DPAK (TO-252) IPAK DPAK P

5.1. std2nk70z std2nk70z-1.pdf Size:451K _st

STD2N50-1
STD2N50-1

STD2NK70Z STD2NK70Z-1 N-channel 700V - 6? - 1.6 A - DPAK/IPAK Zener protected SuperMESH Power MOSFET General features Type VDSS RDS(on) ID Pw STD2NK70Z 700V 7? 1.6A 45W STD2NK70Z-1 700V 7? 1.6A 45W 3 3 2 1 Extremely high dv/dt capability 1 ESD improved capability DPAK IPAK 100% avalanche tested New high voltage benchmark Gate charge minimized Description The SuperME

5.2. std2nc45-1.pdf Size:256K _st

STD2N50-1
STD2N50-1

STD2NC45-1 N-channel 450 V, 4.1 ?, 1.5 A, IPAK SuperMESH Power MOSFET Features Extremely high dv/dt capability 100% avalanche tested Gate charge minimized New high voltage benchmark 3 2 1 Application IPAK Switching applications Description The SuperMESH series is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addit

5.3. std2n62k3 stf2n62k3 stu2n62k3 stp2n62k3.pdf Size:1117K _st

STD2N50-1
STD2N50-1

STD2N62K3, STF2N62K3 STP2N62K3, STU2N62K3 N-channel 620 V, 3 ?, 2.2 A, DPAK, IPAK, TO-220, TO-220FP SuperMESH3 Power MOSFET Features RDS(on) 3 Type VDSS ID Pw max 1 3 2 DPAK 1 STD2N62K3 45 W IPAK STF2N62K3 20 W 620 V < 3.6 ? 2.2 A STP2N62K3 45 W STU2N62K3 100% avalanche tested 3 2 3 1 2 1 Extremely high dv/dt capability TO-220 TO-220FP Gate charge minimized Ve

5.4. stq2nk60zr-ap stp2nk60z stf2nk60z std2nk60z-1.pdf Size:542K _st

STD2N50-1
STD2N50-1

STF2NK60Z - STQ2NK60ZR-AP STP2NK60Z - STD2NK60Z-1 N-CHANNEL 600V - 7.2? - 1.4A TO-220/TO-220FP/TO-92/IPAK Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STF2NK60Z 600 V < 8 ? 1.4 A 20 STQ2NK60ZR-AP 600 V < 8 ? 0.4 A 3 W STP2NK60Z 600 V < 8 ? 1.4 A 45 W STD2NK60Z-1 600 V < 8 ? 1.4 A 45 W 3 2 1 TYPICAL RDS(on) = 7.2 ? TO-92 (Ammop

5.5. std2nk100z stp2nk100z stu2nk100z.pdf Size:453K _st

STD2N50-1
STD2N50-1

STD2NK100Z STP2NK100Z - STU2NK100Z N-channel 1000 V, 6.25 ?, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH Power MOSFET Features RDS(on) VDSS ID PTOT Type max 3 STD2NK100Z 1000 V < 8.5 ? 1.85 A 70 W 2 3 1 STP2NK100Z 1000 V < 8.5 ? 1.85 A 70 W 2 1 STU2NK100Z 1000 V < 8.5 ? 1.85 A 70 W IPAK TO-220 Extremely high dv/dt capability 3 1 100% avalanche tested Gate ch

5.6. std2nc50.pdf Size:442K _st

STD2N50-1
STD2N50-1

STD2NC50 STD2NC50-1 N-CHANNEL 500V - 3? - 2.2A DPAK/IPAK PowerMeshII MOSFET TYPE VDSS RDS(on) ID STD2NC50 500 V < 4 ? 2.2 A STD2NC50-1 500 V < 4 ? 2.2 A TYPICAL RDS(on) = 3 ? 3 3 EXTREMELY HIGH dv/dt CAPABILITY 1 2 100% AVALANCHE TESTED 1 NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DPAK IPAK DESCRIPTION The PowerMESHII is the evolution of the first generation of MES

5.7. std2nb50.pdf Size:451K _st

STD2N50-1
STD2N50-1

STD2NB50 STD2NB50-1 N-CHANNEL 500V - 5? - 1A DPAK / IPAK PowerMesh MOSFET TYPE VDSS RDS(on) ID STD2NB50 500V < 6? 1 A STD2NB50-1 500V < 6? 1 A TYPICAL RDS(on) = 5 ? 3 3 100% AVALANCHE TESTED 2 1 VERY LOW INTRINSIC CAPACITANCES 1 ADD SUFFIX T4 FOR ORDERING IN TAPE & DPAK IPAK REEL DESCRIPTION Using the latest high voltage MESH OVERLAY INTERNAL SCHEMATIC DIAGRAM process,

5.8. std2nc60.pdf Size:283K _st

STD2N50-1
STD2N50-1

STD2NC60 N-CHANNEL 600V - 3.3? - 2A DPAK / IPAK PowerMeshII MOSFET TYPE VDSS RDS(on) ID STD2NC60 600V < 3.6? 2A TYPICAL RDS(on) = 3.3? EXTREMELY HIGH dv/dt CAPABILITY 3 3 2 100% AVALANCHE TESTED 1 1 NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED DPAK IPAK DESCRIPTION The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re- finements intr

5.9. std2nm60-1.pdf Size:482K _st

STD2N50-1
STD2N50-1

STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8? - 2A DPAK/IPAK Zener-Protected MDmeshPower MOSFET TYPE VDSS RDS(on) ID STD2NM60 600V < 3.2 ? 2 A STD2NM60-1 600V < 3.2 ? 2 A TYPICAL RDS(on) = 2.8 ? 3 HIGH dv/dt AND AVALANCHE CAPABILITIES 3 2 100% AVALANCHE TESTED 1 1 LOW INPUT CAPACITANCE AND GATE CHARGE DPAK LOW GATE INPUT RESISTANCE IPAK TO-252 TO-251 TIGHT PROCESS CONTROL

5.10. std2nb60.pdf Size:102K _st

STD2N50-1
STD2N50-1

STD2NB60 N - CHANNEL ENHANCEMENT MODE PowerMESH? MOSFET TYPE V R I DSS DS(on) D STD2NB60 600 V < 3.6 ? 2.6 A TYPICAL R = 3.3 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? process, SGS-Thomson has designed an advanced family of power MOSFET

5.11. std2nc40.pdf Size:249K _st

STD2N50-1
STD2N50-1

STD2NC40-1 N-CHANNEL 400V - 4.7? - 1.5A IPAK PowerMeshII MOSFET TYPE VDSS RDS(on) ID STD2NC40-1 400V <5.5? 1.5A TYPICAL RDS(on) = 4.7? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 NEW HIGH VOLTAGE BENCHMARK 2 GATE CHARGE MINIMIZED 1 DESCRIPTION IPAK The PowerMESHII is the evolution of the first (SUFFIX-1) generation of MESH OVERLAY. The layout re- finements i

5.12. std2na60.pdf Size:407K _st

STD2N50-1
STD2N50-1

STD2NA60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD2NA60 600 V < 4 ? 2.3 A TYPICAL R = 3.3 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 APPLICATION ORIENTED 3 2 CHARACTERIZATION 1 1 THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING DPAK (TO-252) IPAK DPAK P

5.13. std2na50.pdf Size:98K _st

STD2N50-1
STD2N50-1

STD2NA50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(on) D STD2NA50 500 V < 4 ? 2.2 A TYPICAL R = 3.25 ? DS(on) 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 LOW INTRINSIC CAPACITANCES 3 2 GATE CHARGE MINIMIZED 1 1 REDUCED THRESHOLD VOLTAGE SPREAD THROUGH-HOLE IPAK (TO-251) POWE

5.14. std2nb25.pdf Size:274K _st

STD2N50-1
STD2N50-1

STD2NB25 N - CHANNEL 250V - 1.7? - 2A - IPAK/DPAK PowerMESH? MOSFET TYPE VDSS RDS(on) ID STD2NB25 250 V < 2 ? 2 A TYPICAL R = 1.7 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 FOR SMD DPAK VERSION CONTACT 3 2 1 SALES OFFICE 1 DESCRIPTION IPAK DPAK Using the latest high voltage MESH OVERLAY? proc

5.15. std2nc70z.pdf Size:447K _st

STD2N50-1
STD2N50-1

STD2NC70Z STD2NC70Z-1 N-CHANNEL 700V - 4.1? - 2.3A DPAK/IPAK Zener-Protected PowerMESHIII MOSFET TYPE VDSS RDS(on) ID STD2NC70Z 700V < 4.7? 2.3 A STD2NC70Z-1 700V < 4.7? 2.3 A TYPICAL RDS(on) = 4.1? 3 3 EXTREMELY HIGH dv/dt AND CAPABILITY 1 2 GATE TO - SOURCE ZENER DIODES 1 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE DPAK IPAK GATE CHARGE MINIMIZED (Add Suffix T

5.16. std2nm60.pdf Size:474K _st

STD2N50-1
STD2N50-1

STD2NM60 STD2NM60-1 N-CHANNEL 600V - 2.8? - 2A DPAK/IPAK Zener-Protected MDmeshPower MOSFET TYPE VDSS RDS(on) ID STD2NM60 600V < 3.2 ? 2 A STD2NM60-1 600V < 3.2 ? 2 A TYPICAL RDS(on) = 2.8 ? 3 HIGH dv/dt AND AVALANCHE CAPABILITIES 3 2 100% AVALANCHE TESTED 1 1 LOW INPUT CAPACITANCE AND GATE CHARGE DPAK LOW GATE INPUT RESISTANCE IPAK TO-252 TO-251 TIGHT PROCESS CONTROL

5.17. stp2nk90z std2nk90z std2nk90z-1.pdf Size:598K _st

STD2N50-1
STD2N50-1

STP2NK90Z - STD2NK90Z STD2NK90Z-1 N-channel 900V - 5? - 2.1A - TO-220 /DPAK/IPAK Zener-Protected SuperMESH MOSFET General features VDSS Type RDS(on) ID PW (@Tjmax) 3 3 1 2 STD2NK90Z 900V <6.5? 2.1A 70W 1 STD2NK90Z-1 900V <6.5? 2.1A 70W TO-220 DPAK STP2NK90Z 900V <6.5? 2.1A 70W Extremely high dv/dt capability Improved esd capability 3 2 100% avalanche rated 1 IPAK Ga

5.18. std2nc45.pdf Size:391K _st

STD2N50-1
STD2N50-1

STD2NC45-1 STQ1NC45 N-CHANNEL 450V - 4.1? - 1.5 A IPAK / TO-92 SuperMESHPower MOSFET TYPE VDSS RDS(on) ID Pw STD2NC45-1 450 V < 4.5 ? 1.5 A 30 W STQ1NC45 450 V < 4.5 ? 0.5 A 3.1 W 3 TYPICAL RDS(on) = 4.1 ? 2 1 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED IPAK GATE CHARGE MINIMIZED TO-92 NEW HIGH VOLTAGE BENCHMARK DESCRIPTION The SuperMESH series is obtained throug

5.19. std2n80-.pdf Size:47K _st

STD2N50-1
STD2N50-1

STD2NB80-1 N - CHANNEL 800V - 4.6? - 1.9A - IPAK PowerMESH? MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STD2NB80-1 800V < 6.5 ? 1.9 A TYPICAL R = 4.6 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 FOR SMD DPAK VERSION CONTACT 2 SALES OFFICE 1 IPAK DESCRIPTION TO-251 Using the latest high vol

Otros transistores... STD17N06L , STD17N06L-1 , STD17N06LT4 , STD17N06T4 , STD1NA60-1 , STD1NA60T4 , STD20N06-1 , STD20N06T4 , 2SK3562 , STD2N50T4 , STD2NA60-1 , STD2NA60T4 , STD3N25-1 , STD3N25T4 , STD3N30-1 , STD3N30L , STD3N30L-1 .

 


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