IPD30N12S3L-31 Todos los transistores

 ..1. Size:392K  infineon
 ipd30n12s3l-31.pdf

IPD30N12S3L-31 OptiMOS -T Power-Transistor Product Summary VDS 120 V RDS(on),max 31 mW ID 30 A Features OptiMOS - power MOSFET for automotive applications PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Typ

 7.1. Size:176K  infineon
 ipd30n10s3l-34 ipd30n10s3l-34 ds 1 1.pdf

IPD30N10S3L-34 OptiMOS -T Power-Transistor Product Summary V 100 V DS R 31 mW DS(on),max I 30 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD30N10S3L-34 PG-TO252-3-11 3N10L34 Ma

 7.2. Size:210K  inchange semiconductor
 ipd30n10s3l-34.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPD30N10S3L-34 FEATURES With TO-252(DPAK) packaging With low gate drive requirements Very high commutation ruggedness Extremely high frequency operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications LCD&PDP TV PC

 8.1. Size:151K  infineon
 ipd30n03s2l-07.pdf

IPD30N03S2L-07 OptiMOS Power-Transistor Product Summary Features V 30 V DS N-channel Logic Level - Enhancement mode R 6.7 m DS(on),max Automotive AEC Q101 qualified I 30 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD30N03S2

 8.2. Size:148K  infineon
 ipd30n06s2l-13.pdf

IPD30N06S2L-13 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 13 m DS(on),max Automotive AEC Q101 qualified I 30 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Markin

 8.3. Size:150K  infineon
 ipd30n08s2l-21.pdf

IPD30N08S2L-21 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel Logic Level - Enhancement mode R 20.5 m DS(on),max Automotive AEC Q101 qualified I 30 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD30N08S

 8.4. Size:149K  infineon
 ipd30n06s2-15.pdf

IPD30N06S2-15 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 14.7 m DS(on),max Automotive AEC Q101 qualified I 30 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD30N06

 8.5. Size:148K  infineon
 ipd30n06s2l-23.pdf

IPD30N06S2L-23 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel Logic Level - Enhancement mode R (SMD version) 23 m DS(on),max Automotive AEC Q101 qualified I 30 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Markin

 8.6. Size:162K  infineon
 ipd30n06s4l-23 ipd30n06s4l-23 ds 10.pdf

IPD30N06S4L-23 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 23 m DS(on),max I 30 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD30N06S4L-23 PG-TO252-3-11 4N06L23 Maximum rat

 8.7. Size:149K  infineon
 ipd30n06s2-23.pdf

IPD30N06S2-23 OptiMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Enhancement mode R (SMD version) 23 m DS(on),max Automotive AEC Q101 qualified I 30 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD30N06S2

 8.8. Size:152K  infineon
 ipd30n03s2l-20.pdf

IPD30N03S2L-20 OptiMOS Power-Transistor Product Summary Features V 30 V DS N-channel Logic Level - Enhancement mode R 20 m DS(on),max Automotive AEC Q101 qualified I 30 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD30N03S2L

 8.9. Size:184K  infineon
 ipd30n03s4l-14 ipd30n03s4l-14 ds.pdf

IPD30N03S4L-14 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 13.6 m DS(on),max I 30 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD30N03S4L-1

 8.10. Size:151K  infineon
 ipd30n08s2-22.pdf

IPD30N08S2-22 OptiMOS Power-Transistor Product Summary Features V 75 V DS N-channel - Enhancement mode R 21.5 m DS(on),max Automotive AEC Q101 qualified I 30 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD30N08S2-22 PG-TO252

 8.11. Size:151K  infineon
 ipd30n03s2l-10.pdf

IPD30N03S2L-10 OptiMOS Power-Transistor Product Summary Features V 30 V DS N-channel Logic Level - Enhancement mode R 10 m DS(on),max Automotive AEC Q101 qualified I 30 A D MSL1 up to 260 C peak reflow 175 C operating temperature PG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD30N03S2L

 8.12. Size:173K  infineon
 ipd30n03s4l-09.pdf

IPD30N03S4L-09 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 9.0 mW DS(on),max I 30 A D Features PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD30N03S4L-09 PG-TO252-3-11 4N03L09 M

 8.13. Size:1828K  cn vbsemi
 ipd30n03s2l-10.pdf

IPD30N03S2L-10 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.005 at VGS = 10 V 80 30 31 nC 0.006 at VGS = 4.5 V 68 APPLICATIONS D OR-ing TO-252 Server DC/DC G G D S Top View S N-Channel MOSFET

 8.14. Size:207K  inchange semiconductor
 ipd30n03s2l.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPD30N03S2L FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Load switch Power management ABSOLUTE MAXIMUM RATINGS(T