IPD30N12S3L-31 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPD30N12S3L-31
Código: 3N12L31
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 57 W
Voltaje máximo drenador - fuente |Vds|: 120 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 30 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.4 V
Carga de la puerta (Qg): 24 nC
Tiempo de subida (tr): 4 nS
Conductancia de drenaje-sustrato (Cd): 380 pF
Resistencia entre drenaje y fuente RDS(on): 0.031 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de MOSFET IPD30N12S3L-31
IPD30N12S3L-31 Datasheet (PDF)
ipd30n12s3l-31.pdf
IPD30N12S3L-31OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max 31 mW ID 30 A Features OptiMOS - power MOSFET for automotive applicationsPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedTyp
ipd30n10s3l-34 ipd30n10s3l-34 ds 1 1.pdf
IPD30N10S3L-34OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR 31mWDS(on),maxI 30 ADFeatures N-channel - Enhancement modePG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD30N10S3L-34 PG-TO252-3-11 3N10L34Ma
ipd30n10s3l-34.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPD30N10S3L-34FEATURESWith TO-252(DPAK) packagingWith low gate drive requirementsVery high commutation ruggednessExtremely high frequency operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLCD&PDP TVPC
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IPD30N03S2L-07OptiMOS Power-TransistorProduct SummaryFeaturesV 30 VDS N-channel Logic Level - Enhancement modeR 6.7mDS(on),max Automotive AEC Q101 qualifiedI 30 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD30N03S2
ipd30n06s2l-13.pdf
IPD30N06S2L-13OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 13mDS(on),max Automotive AEC Q101 qualifiedI 30 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package Markin
ipd30n08s2l-21.pdf
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ipd30n06s2-15.pdf
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ipd30n06s2l-23.pdf
IPD30N06S2L-23OptiMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel Logic Level - Enhancement modeR (SMD version) 23mDS(on),max Automotive AEC Q101 qualifiedI 30 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package Markin
ipd30n06s4l-23 ipd30n06s4l-23 ds 10.pdf
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ipd30n06s2-23.pdf
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ipd30n03s2l-20.pdf
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ipd30n03s4l-14 ipd30n03s4l-14 ds.pdf
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ipd30n08s2-22.pdf
IPD30N08S2-22OptiMOS Power-TransistorProduct SummaryFeaturesV 75 VDS N-channel - Enhancement modeR 21.5mDS(on),max Automotive AEC Q101 qualifiedI 30 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD30N08S2-22 PG-TO252
ipd30n03s2l-10.pdf
IPD30N03S2L-10OptiMOS Power-TransistorProduct SummaryFeaturesV 30 VDS N-channel Logic Level - Enhancement modeR 10mDS(on),max Automotive AEC Q101 qualifiedI 30 AD MSL1 up to 260C peak reflow 175C operating temperaturePG-TO252-3-11 Green package (lead free) Ultra low Rds(on) 100% Avalanche testedType Package MarkingIPD30N03S2L
ipd30n03s4l-09.pdf
IPD30N03S4L-09OptiMOS-T2 Power-TransistorProduct SummaryV 30 VDSR 9.0mWDS(on),maxI 30 ADFeaturesPG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Avalanche testedType Package MarkingIPD30N03S4L-09 PG-TO252-3-11 4N03L09M
ipd30n03s2l-10.pdf
IPD30N03S2L-10www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.005 at VGS = 10 V 8030 31 nC0.006 at VGS = 4.5 V 68APPLICATIONSD OR-ingTO-252 Server DC/DCGG D STop ViewSN-Channel MOSFET
ipd30n03s2l.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPD30N03S2LFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T
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