IPD40DP06NM MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPD40DP06NM

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 19 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.3 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 40 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm

Encapsulados: TO252

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IPD40DP06NM datasheet

 ..1. Size:885K  infineon
 ipd40dp06nm.pdf pdf_icon

IPD40DP06NM

IPD40DP06NM MOSFET D-PAK OptiMOSTM Power Transistor, -60 V Features tab P-Channel Very low on-resistance R DS(on) 100% avalanche tested Normal Level Enhancement mode 1 Pb-free lead plating; RoHS compliant 3 Halogen-free according to IEC61249-2-21 Product validation Fully qualified according to JEDEC for Industrial Applications Drain tab Table 1 Ke

 9.1. Size:239K  infineon
 ipd40n03s4l-08 ipd40n03s4l-08 ds 1 1.pdf pdf_icon

IPD40DP06NM

IPD40N03S4L-08 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 8.3 mW DS(on),max I 40 A D Features PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD40N03S4L-08 PG-TO252-3-11 4N03L08 M

 9.2. Size:992K  infineon
 ipd400n06ng.pdf pdf_icon

IPD40DP06NM

$ " " $;B1= '=- >5>?;= $=;0@/? &@99-=D Features D O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>= 4 mW D n) m x O ' 270==4; 4=70=24@?4@0B8=6 B4"+ 2> 0B R C=;4AA >B74@E8A4 A?

 9.3. Size:241K  inchange semiconductor
 ipd400n06n.pdf pdf_icon

IPD40DP06NM

isc N-Channel MOSFET Transistor IPD400N06N,IIPD400N06N FEATURES Static drain-source on-resistance RDS(on) 40m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 60 V DSS V Ga

MOSTRAR MÁS

Otros transistores... IPC90N04S5L-3R3, IPD090N03LGE8177, IPD100N04S4L-02, IPD25DP06LM, IPD25DP06NM, IPD30N12S3L-31, IPD35N12S3L-24, IPD380P06NM, AON7506, IPD50N08S4-13, IPD50N12S3L-15, IPD50P04P4-13, IPD60N10S4-12, IPD60N10S4L-12, IPD60R145CFD7, IPD60R180P7, IPD60R1K0PFD7S