IPD60R210CFD7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPD60R210CFD7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 64 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 16.5 nS
Cossⓘ - Capacitancia de salida: 18 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.21 Ohm
Paquete / Cubierta: TO252
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IPD60R210CFD7 Datasheet (PDF)
ipd60r210cfd7.pdf
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ipd60r210pfd7s.pdf
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ipd60r2k0pfd7s.pdf
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ipd60r280cfd7.pdf
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ipd60r280pfd7s.pdf
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ipd60r280p7.pdf
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ipd60r2k0c6.pdf
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ipd60r280p7s.pdf
isc N-Channel MOSFET Transistor IPD60R280P7SIIPD60R280P7SFEATURESStatic drain-source on-resistance:RDS(on)0.28Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain
ipd60r280cfd7.pdf
isc N-Channel MOSFET Transistor IPD60R280CFD7IIPD60R280CFD7FEATURESStatic drain-source on-resistance:RDS(on)0.28Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved MOSFET reverse diode dv/dt and diF/dt ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE
ipd60r280p7.pdf
isc N-Channel MOSFET Transistor IPD60R280P7IIPD60R280P7FEATURESStatic drain-source on-resistance:RDS(on)0.28Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for a wide variety of applications and power rangesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER
ipd60r2k1ce.pdf
isc N-Channel MOSFET Transistor IPD60R2K1CE,IIPD60R2K1CEFEATURESStatic drain-source on-resistance:RDS(on)2.1Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV
ipd60r2k0c6.pdf
isc N-Channel MOSFET Transistor IPD60R2K0C6,IIPD60R2K0C6FEATURESStatic drain-source on-resistance:RDS(on)2Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV G
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
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