IPD60R210CFD7 Todos los transistores

 ..1. Size:825K  infineon
 ipd60r210cfd7.pdf

IPD60R210CFD7 MOSFET DPAK 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications suc

 5.1. Size:635K  infineon
 ipd60r210pfd7s.pdf

IPD60R210PFD7S MOSFET DPAK 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d

 7.1. Size:2232K  infineon
 ipd60r2k1ce ipu60r2k1ce.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 600V CoolMOS CE Power Transistor IPx60R2K1CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS CE Power Transistor IPD60R2K1CE, IPU60R2K1CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio

 7.2. Size:911K  infineon
 ipd60r280p7s.pdf

IPD60R280P7S MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSF

 7.3. Size:603K  infineon
 ipd60r2k0pfd7s.pdf

IPD60R2K0PFD7S MOSFET DPAK 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d

 7.4. Size:1184K  infineon
 ipd60r280cfd7.pdf

IPD60R280CFD7 MOSFET DPAK 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching applications suc

 7.5. Size:611K  infineon
 ipd60r280pfd7s.pdf

IPD60R280PFD7S MOSFET DPAK 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d

 7.6. Size:1081K  infineon
 ipd60r280p7.pdf

IPD60R280P7 MOSFET DPAK 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFE

 7.7. Size:1300K  infineon
 ipd60r2k0c6 2.0.pdf

MOSFET +

 7.8. Size:938K  infineon
 ipd60r2k0c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor lPD60R2KOC6 Data Sheet Rev. 2.1 Final Industrial & Multimarket +

 7.9. Size:242K  inchange semiconductor
 ipd60r280p7s.pdf

isc N-Channel MOSFET Transistor IPD60R280P7S IIPD60R280P7S FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for hard and soft switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain

 7.10. Size:242K  inchange semiconductor
 ipd60r280cfd7.pdf

isc N-Channel MOSFET Transistor IPD60R280CFD7 IIPD60R280CFD7 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved MOSFET reverse diode dv/dt and diF/dt ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETE

 7.11. Size:243K  inchange semiconductor
 ipd60r280p7.pdf

isc N-Channel MOSFET Transistor IPD60R280P7 IIPD60R280P7 FEATURES Static drain-source on-resistance RDS(on) 0.28 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Suitable for a wide variety of applications and power ranges ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER

 7.12. Size:242K  inchange semiconductor
 ipd60r2k1ce.pdf

isc N-Channel MOSFET Transistor IPD60R2K1CE,IIPD60R2K1CE FEATURES Static drain-source on-resistance RDS(on) 2.1 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V

 7.13. Size:242K  inchange semiconductor
 ipd60r2k0c6.pdf

isc N-Channel MOSFET Transistor IPD60R2K0C6,IIPD60R2K0C6 FEATURES Static drain-source on-resistance RDS(on) 2 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 V DSS V G