IPD60R210CFD7 Todos los transistores

 

IPD60R210CFD7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPD60R210CFD7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 64 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 16.5 nS
   Cossⓘ - Capacitancia de salida: 18 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.21 Ohm
   Paquete / Cubierta: TO252

 Búsqueda de reemplazo de MOSFET IPD60R210CFD7

 

IPD60R210CFD7 Datasheet (PDF)

 ..1. Size:825K  infineon
ipd60r210cfd7.pdf

IPD60R210CFD7
IPD60R210CFD7

IPD60R210CFD7MOSFETDPAK600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications suc

 5.1. Size:635K  infineon
ipd60r210pfd7s.pdf

IPD60R210CFD7
IPD60R210CFD7

IPD60R210PFD7SMOSFETDPAK600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

 7.1. Size:2232K  infineon
ipd60r2k1ce ipu60r2k1ce.pdf

IPD60R210CFD7
IPD60R210CFD7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R2K1CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R2K1CE, IPU60R2K1CEDPAK IPAK1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

 7.2. Size:911K  infineon
ipd60r280p7s.pdf

IPD60R210CFD7
IPD60R210CFD7

IPD60R280P7SMOSFETDPAK600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSF

 7.3. Size:603K  infineon
ipd60r2k0pfd7s.pdf

IPD60R210CFD7
IPD60R210CFD7

IPD60R2K0PFD7SMOSFETDPAK600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

 7.4. Size:1184K  infineon
ipd60r280cfd7.pdf

IPD60R210CFD7
IPD60R210CFD7

IPD60R280CFD7MOSFETDPAK600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications suc

 7.5. Size:611K  infineon
ipd60r280pfd7s.pdf

IPD60R210CFD7
IPD60R210CFD7

IPD60R280PFD7SMOSFETDPAK600V CoolMOS PFD7 SJ Power DeviceCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.The latest CoolMOS PFD7 is an optimized platform tailored to targetcost sensitive applications in consumer markets such as charger, adapter,motor d

 7.6. Size:1081K  infineon
ipd60r280p7.pdf

IPD60R210CFD7
IPD60R210CFD7

IPD60R280P7MOSFETDPAK600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology fortabhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFE

 7.7. Size:1300K  infineon
ipd60r2k0c6 2.0.pdf

IPD60R210CFD7
IPD60R210CFD7

MOSFET+

 7.8. Size:938K  infineon
ipd60r2k0c6.pdf

IPD60R210CFD7
IPD60R210CFD7

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorlPD60R2KOC6Data SheetRev. 2.1FinalIndustrial & Multimarket +

 7.9. Size:242K  inchange semiconductor
ipd60r280p7s.pdf

IPD60R210CFD7
IPD60R210CFD7

isc N-Channel MOSFET Transistor IPD60R280P7SIIPD60R280P7SFEATURESStatic drain-source on-resistance:RDS(on)0.28Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for hard and soft switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain

 7.10. Size:242K  inchange semiconductor
ipd60r280cfd7.pdf

IPD60R210CFD7
IPD60R210CFD7

isc N-Channel MOSFET Transistor IPD60R280CFD7IIPD60R280CFD7FEATURESStatic drain-source on-resistance:RDS(on)0.28Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved MOSFET reverse diode dv/dt and diF/dt ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

 7.11. Size:243K  inchange semiconductor
ipd60r280p7.pdf

IPD60R210CFD7
IPD60R210CFD7

isc N-Channel MOSFET Transistor IPD60R280P7IIPD60R280P7FEATURESStatic drain-source on-resistance:RDS(on)0.28Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuitable for a wide variety of applications and power rangesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

 7.12. Size:242K  inchange semiconductor
ipd60r2k1ce.pdf

IPD60R210CFD7
IPD60R210CFD7

isc N-Channel MOSFET Transistor IPD60R2K1CE,IIPD60R2K1CEFEATURESStatic drain-source on-resistance:RDS(on)2.1Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV

 7.13. Size:242K  inchange semiconductor
ipd60r2k0c6.pdf

IPD60R210CFD7
IPD60R210CFD7

isc N-Channel MOSFET Transistor IPD60R2K0C6,IIPD60R2K0C6FEATURESStatic drain-source on-resistance:RDS(on)2Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV G

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