IPD70P04P4L-08 Todos los transistores

 ..1. Size:281K  infineon
 ipd70p04p4l-08.pdf

IPD70P04P4L-08 OptiMOS -P2 Power-Transistor Product Summary VDS -40 V RDS(on) 7.8 mW ID -70 A Features P-channel - Logic Level - Enhancement mode AEC qualified PG-TO252-3-313 MSL1 up to 260 C peak reflow Tab 175 C operating temperature Green package (RoHS compliant) 1 3 100% Avalanche tested Source pin 3 Gate pin 1 Type Package Marking Drain pi

 4.1. Size:132K  infineon
 ipd70p04p4-09 ipd70p04p4-09 ds 10.pdf

IPD70P04P4-09 OptiMOS -P2 Power-Transistor Product Summary V -40 V DS R 8.9 m DS(on) I -73 A D Features PG-TO252-3-313 P-channel - Normal Level - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD70P04P4-09 PG-TO252-3-313 4P0409 Maxi

 9.1. Size:1202K  1
 ipd70r900p7s.pdf

IPD70R900P7S MOSFET DPAK 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV

 9.2. Size:176K  infineon
 ipd70n10s3l-12 ipd70n10s3l-12 ds 1 1.pdf

IPD70N10S3L-12 OptiMOS -T Power-Transistor Product Summary V 100 V DS R 11.5 mW DS(on),max I 70 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD70N10S3L-12 PG-TO252-3-11 QN10L12

 9.3. Size:1056K  infineon
 ipd70r1k4ce ips70r1k4ce.pdf

IPD70R1K4CE, IPS70R1K4CE MOSFET DPAK IPAK SL 700V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Ligh

 9.4. Size:175K  infineon
 ipd70n10s3-12 ipd70n10s3-12 ds 1 1.pdf

IPD70N10S3-12 OptiMOS -T Power-Transistor Product Summary V 100 V DS R 11.1 mW DS(on),max I 70 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD70N10S3-12 PG-TO252-3-11 QN1012 Max

 9.5. Size:1003K  infineon
 ipd70r1k4p7s.pdf

IPD70R1K4P7S MOSFET DPAK 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV

 9.6. Size:186K  infineon
 ipd70n03s4l-04.pdf

IPD70N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 4.3 m DS(on),max I 70 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD70N03S4L-04

 9.7. Size:394K  infineon
 ipd70n12s3l-12.pdf

IPD70N12S3L-12 OptiMOS -T Power-Transistor Product Summary VDS 120 V RDS(on),max 11.5 mW ID 70 A Features OptiMOS - power MOSFET for automotive applications PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested T

 9.8. Size:182K  infineon
 ipd70n04s3-07 ds 1 0.pdf

IPD70N04S3-07 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 6.0 m DS(on),max I 82 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD70N04S3-07 PG-TO252-3-11 QN0407 Max

 9.9. Size:982K  infineon
 ipd70r600ce.pdf

IPD70R600CE MOSFET DPAK 700V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high

 9.10. Size:1188K  infineon
 ipd70r360p7s.pdf

IPD70R360P7S MOSFET DPAK 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV

 9.11. Size:1202K  infineon
 ipd70r900p7s.pdf

IPD70R900P7S MOSFET DPAK 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV

 9.12. Size:992K  infineon
 ipd70r600p7s.pdf

IPD70R600P7S MOSFET DPAK 700V CoolMOS P7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting, TV

 9.13. Size:186K  infineon
 ipd70n03s4l-04 ds.pdf

IPD70N03S4L-04 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 4.3 m DS(on),max I 70 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD70N03S4L-04

 9.14. Size:1320K  infineon
 ipi70r950ce ipd70r950ce ips70r950ce.pdf

IPI70R950CE, IPD70R950CE, IPS70R950CE MOSFET I PAK DPAK IPAK SL 700V CoolMOS CE Power Transistor tab tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applicati

 9.15. Size:949K  infineon
 ipd70r2k0ce.pdf

IPD70R2K0CE MOSFET DPAK 700V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high

 9.16. Size:361K  infineon
 ipd70n12s3-11.pdf

IPD70N12S3-11 OptiMOS -T Power-Transistor Product Summary VDS 120 V RDS(on),max 11.1 mW ID 70 A Features OptiMOS - power MOSFET for automotive applications PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ty

 9.17. Size:242K  inchange semiconductor
 ipd70r950ce.pdf

isc N-Channel MOSFET Transistor IPD70R950CE,IIPD70R950CE FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 9.18. Size:242K  inchange semiconductor
 ipd70r600ce.pdf

isc N-Channel MOSFET Transistor IPD70R600CE,IIPD70R600CE FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 9.19. Size:243K  inchange semiconductor
 ipd70r1k4ce.pdf

isc N-Channel MOSFET Transistor IPD70R1K4CE,IIPD70R1K4CE FEATURES Static drain-source on-resistance RDS(on) 1.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 9.20. Size:242K  inchange semiconductor
 ipd70r2k0ce.pdf

isc N-Channel MOSFET Transistor IPD70R2K0CE,IIPD70R2K0CE FEATURES Static drain-source on-resistance RDS(on) 2 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V