IPD80R2K0P7 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPD80R2K0P7

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 24 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 4 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2 Ohm

Encapsulados: TO252

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IPD80R2K0P7 datasheet

 ..1. Size:964K  infineon
 ipd80r2k0p7.pdf pdf_icon

IPD80R2K0P7

IPD80R2K0P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and

 6.1. Size:2275K  infineon
 ipd80r2k8ce ipu80r2k8ce.pdf pdf_icon

IPD80R2K0P7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPx80R2K8CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPD80R2K8CE, IPU80R2K8CE DPAK IPAK 1 Description tab tab CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combine

 6.2. Size:960K  infineon
 ipd80r2k4p7.pdf pdf_icon

IPD80R2K0P7

IPD80R2K4P7 MOSFET DPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features 2 1 Best-in-class FOM R * E ; reduced Q , C , and

 6.3. Size:510K  infineon
 ipd80r2k7c3a.pdf pdf_icon

IPD80R2K0P7

Data Sheet IPD80R2k7C3A CoolMOSTM Power Transistor Product Summary Features VDS 800 V New revolutionary high voltage technology RDS(on)max @ Tj = 25 C 2.7 W Extreme dv/dt rated Qg,typ 12 nC High peak current capability Qualified according to AEC Q101 Green package (RoHS compliant), Pb-free lead plating, halogen free for mold compound PG-TO252-3 Ultra

MOSTRAR MÁS

Otros transistores... IPD70N12S3-11, IPD70N12S3L-12, IPD70P04P4L-08, IPD70R1K4P7S, IPD70R360P7S, IPD70R600P7S, IPD80R1K4P7, IPD80R280P7, AO3400A, IPD80R2K4P7, IPD80R2K7C3A, IPD80R360P7, IPD80R3K3P7, IPD80R450P7, IPD80R4K5P7, IPD80R600P7, IPD80R750P7