IPD80R2K4P7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPD80R2K4P7
   Código: 80R2K4P7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 22 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   Qgⓘ - Carga de la puerta: 7.5 nC
   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 3.8 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm
   Paquete / Cubierta: TO252

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IPD80R2K4P7 Datasheet (PDF)

..1. Size:960K infineon
ipd80r2k4p7.pdf

IPD80R2K4P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

6.1. Size:2275K infineon
ipd80r2k8ce ipu80r2k8ce.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE800V CoolMOS CE Power TransistorIPx80R2K8CEData SheetRev. 2.1FinalPower Management & Multimarket800V CoolMOS CE Power TransistorIPD80R2K8CE, IPU80R2K8CEDPAK IPAK1 DescriptiontabtabCoolMOS CE is a revolutionary technology for high voltage powerMOSFETs. The high voltage capability combine

6.2. Size:964K infineon
ipd80r2k0p7.pdf

IPD80R2K0P7MOSFETDPAK800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vtabsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features21 Best-in-class FOM R * E ; reduced Q , C , and

6.3. Size:510K infineon
ipd80r2k7c3a.pdf

Data Sheet IPD80R2k7C3ACoolMOSTM Power TransistorProduct Summary FeaturesVDS 800 V New revolutionary high voltage technologyRDS(on)max @ Tj = 25C 2.7 W Extreme dv/dt ratedQg,typ 12 nC High peak current capability Qualified according to AEC Q101 Green package (RoHS compliant), Pb-free lead plating, halogen free for mold compoundPG-TO252-3 Ultra

6.4. Size:243K inchange semiconductor
ipd80r2k8ce.pdf

isc N-Channel MOSFET Transistor IPD80R2K8CE,IIPD80R2K8CEFEATURESStatic drain-source on-resistance:RDS(on)2.8Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SML802R8KN

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