IPD90N10S4-06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPD90N10S4-06
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 136
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 100
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 90
A
Tjⓘ - Temperatura máxima de unión: 175
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5
nS
Cossⓘ - Capacitancia
de salida: 1190
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0067
Ohm
Paquete / Cubierta:
TO252
Búsqueda de reemplazo de IPD90N10S4-06 MOSFET
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Selección ⓘ de transistores por parámetros
Principales características: IPD90N10S4-06
..1. Size:260K infineon
ipd90n10s4-06.pdf 
IPD90N10S4-06 OptiMOSTM-T2 Power-Transistor Product Summary VDS 100 V RDS(on),max 6.7 mW ID 90 A Features N-channel - Normal Level - Enhancement mode PG-TO252-3-313 AEC qualified TAB MSL1 up to 260 C peak reflow 175 C operating temperature 1 3 Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N10S4-06 PG-TO252-3-313 4N100
4.1. Size:130K infineon
ipd90n10s4l-06.pdf
IPD90N10S4L-06 OptiMOSTM-T2 Power-Transistor Product Summary V 100 V DS R 6.6 mW DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified TAB MSL1 up to 260 C peak reflow 175 C operating temperature 1 3 Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N10S4L-06 PG-TO252-3-313 4N10L06 Max
8.1. Size:163K infineon
ipd90n06s4-04 ipd90n06s4-04 ds 12.pdf
IPD90N06S4-04 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 3.8 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N06S4-04 PG-TO252-3-11 4N0604 Maximum ratings, a
8.2. Size:163K infineon
ipd90n06s4l-03 ipd90n06s4l-03 ds 10.pdf
IPD90N06S4L-03 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 3.5 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Type Package Marking IPD90N06S4L-03 P
8.3. Size:184K infineon
ipd90n04s3-04 ds 1 0.pdf
IPD90N04S3-04 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 3.6 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S3-04 PG-TO252-3-11 QN0404 Max
8.4. Size:152K infineon
ipd90n04s4-03 ipd90n04s4-03 ds 1 0.pdf
IPD90N04S4-03 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 3.2 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S4-03 PG-TO252-3-313 4N0403 Maximum ratings,
8.5. Size:154K infineon
ipd90n04s4-04 ipd90n04s4-04 ds 1 0.pdf
IPD90N04S4-04 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 4.1 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S4-04 PG-TO252-3-313 4N0404 Maximum ratings,
8.6. Size:163K infineon
ipd90n06s4-07 ipd90n06s4-07 ds 10.pdf
IPD90N06S4-07 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 6.9 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSon Type Package Marking IPD90N04S6-07 PG-TO252-3-11
8.7. Size:163K infineon
ipd90n06s4-05 ipd90n06s4-05 ds 10.pdf
IPD90N06S4-05 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 5.1 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra Low RDSon Type Package Marking IPD90N04S6-05 PG-TO252-3-11
8.8. Size:162K infineon
ipd90n04s3-h4.pdf
IPD90N04S3-H4 OptiMOS -T Power-Transistor Product Summary V 40 V DS R 4.3 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green package (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S3-H4 PG-TO252-3-11 QN04H4 Max
8.9. Size:249K infineon
ipd90n08s4-05.pdf
IPD90N08S4-05 OptiMOS -T2 Power-Transistor Product Summary VDS 80 V RDS(on),max 5.3 mW ID 90 A Features PG-TO252-3-313 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N08S4-05 PG-TO252-3-313 4N0805 Maximum ratings, a
8.10. Size:157K infineon
ipd90n03s4l-03 ipd90n03s4l-03 ds.pdf
IPD90N03S4L-03 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 3.3 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N03S4L-03 PG-TO252-3-11 4N03L03
8.11. Size:163K infineon
ipd90n06s4l-05 ipd90n06s4l-05 ds 10.pdf
IPD90N06S4L-05 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 4.6 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Type Package Marking IPD90N06S4L-05 PG-TO252-3-1
8.12. Size:154K infineon
ipd90n04s4l-04 ipd90n04s4l-04 ds 1 0.pdf
IPD90N04S4L-04 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 3.8 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S4L-04 PG-TO252-3-313 4N04L04 Maximum ratin
8.13. Size:152K infineon
ipd90n04s4-02 ipd90n04s4-02 ds 1 0.pdf
IPD90N04S4-02 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 2.4 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S4-02 PG-TO252-3-313 4N0402 Maximum ratings,
8.14. Size:160K infineon
ipd90n03s4l-02 ipd90n03s4l-02 ds 3 0.pdf
IPD90N03S4L-02 OptiMOS -T2 Power-Transistor Product Summary V 30 V DS R 2.2 m DS(on),max I 90 A D Features N-channel - Enhancement mode PG-TO252-3-11 Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Type Package Marking IPD90N03S4L-02
8.15. Size:163K infineon
ipd90n06s4l-06 ipd90n06s4l-06 ds 10.pdf
IPD90N06S4L-06 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R 6.3 m DS(on),max I 90 A D Features PG-TO252-3-11 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Avalanche tested Ultra low RDSon Type Package Marking IPD90N06S4L-06 P
8.16. Size:154K infineon
ipd90n04s4-05 ipd90n04s4-05 ds 1 0.pdf
IPD90N04S4-05 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R 5.2 m DS(on),max I 86 A D Features N-channel - Enhancement mode PG-TO252-3-313 AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Type Package Marking IPD90N04S4-05 PG-TO252-3-313 4N0405 Maximum ratings,
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