IPG20N06S2L-50A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPG20N06S2L-50A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 51 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 3 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: TDSON-8-10

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IPG20N06S2L-50A Datasheet (PDF)

..1. Size:162K infineon
ipg20n06s2l-50 ipg20n06s2l-50 ds 10.pdf

IPG20N06S2L-50OptiMOS Power-TransistorProduct SummaryV 55 VDS4)50mRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S2L-50 PG-TDSON-8-4 2N0

0.1. Size:196K infineon
ipg20n06s2l-50a.pdf

IPG20N06S2L-50AOptiMOS Power-TransistorProduct SummaryVDS 55 VRDS(on),max4) 50mID 20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Type Pac

2.1. Size:162K infineon
ipg20n06s2l-35 ipg20n06s2l-35 ds 10.pdf

IPG20N06S2L-35OptiMOS Power-TransistorProduct SummaryV 55 VDS4)35mRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S2L-35 PG-TDSON-8-4 2N0

2.2. Size:201K infineon
ipg20n06s2l-65a.pdf

IPG20N06S2L-65AOptiMOS Power-TransistorProduct SummaryVDS55 VRDS(on),max3)65mID20 AFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-10 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Feasible for automatic optical inspection (AOI)Type

2.3. Size:162K infineon
ipg20n06s2l-65 ipg20n06s2l-65 ds 10.pdf

IPG20N06S2L-65OptiMOS Power-TransistorProduct SummaryV 55 VDS3)65mRDS(on),maxI 20 ADFeatures Dual N-channel Logic Level - Enhancement modePG-TDSON-8-4 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche testedType Package MarkingIPG20N06S2L-65 PG-TDSON-8-4 2N0

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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Recientemente añadidas las descripciónes de los transistores: