IPI100N12S3-05 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPI100N12S3-05

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 120 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 100 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 2520 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm

Encapsulados: TO262

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IPI100N12S3-05 datasheet

 ..1. Size:405K  infineon
ipb100n12s3-05 ipi100n12s3-05 ipp100n12s3-05.pdf pdf_icon

IPI100N12S3-05

IPB100N12S3-05 IPI100N12S3-05, IPP100N12S3-05 OptiMOS -T Power-Transistor Product Summary VDS 120 V RDS(on),max (SMD version) 4.8 mW ID 100 A Features OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualified PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260 C peak reflow 175 C operating temper

 6.1. Size:186K  infineon
ipb100n10s3-05 ipi100n10s3-05 ipp100n10s3-05.pdf pdf_icon

IPI100N12S3-05

IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 OptiMOS -T Power-Transistor Product Summary V 100 V DS R (SMD version) 4.8 m DS(on),max I 100 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Aval

 6.2. Size:191K  infineon
ipi100n10s3-05 ipp100n10s3-05 ipb100n10s3-05.pdf pdf_icon

IPI100N12S3-05

IPB100N10S3-05 IPI100N10S3-05, IPP100N10S3-05 OptiMOS -T Power-Transistor Product Summary V 100 V DS R (SMD version) 4.8 m DS(on),max I 100 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green product (RoHS compliant) 100% Aval

 7.1. Size:159K  infineon
ipp100n04s4-h2 ipb100n04s4-h2 ipi100n04s4-h2.pdf pdf_icon

IPI100N12S3-05

IPB100N04S4-H2 IPI100N04S4-H2, IPP100N04S4-H2 OptiMOS -T2 Power-Transistor Product Summary V 40 V DS R (SMD version) 2.4 m DS(on),max I 100 A D Features PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode AEC qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested Ty

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