IPI100N12S3-05 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPI100N12S3-05
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 120 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 100 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 2520 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0048 Ohm
Paquete / Cubierta: TO262
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IPI100N12S3-05 Datasheet (PDF)
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Otros transistores... IPG20N06S2L-65A , IPG20N06S4L-11A , IPG20N06S4L-26A , IPG20N10S4-36A , IPG20N10S4L-22 , IPG20N10S4L-22A , IPG20N10S4L-35A , IPI08CN10NG , IRF3710 , IPI120N08S4-03 , IPI120N08S4-04 , IPI120N10S4-03 , IPI120N10S4-05 , IPI120P04P4-04 , IPI120P04P4L-03 , IPI16CN10NG , IPI50N12S3L-15 .
History: CHM4435AJGP | AON6586 | FKI06051 | FKI07117 | FK8V06120L | FKI10300 | FKI07174
History: CHM4435AJGP | AON6586 | FKI06051 | FKI07117 | FK8V06120L | FKI10300 | FKI07174
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