IPI120N10S4-03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPI120N10S4-03
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 2460 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm
Paquete / Cubierta: TO262
- Selección de transistores por parámetros
IPI120N10S4-03 Datasheet (PDF)
ipb120n10s4-03 ipi120n10s4-03 ipp120n10s4-03.pdf

IPB120N10S4-03IPI120N10S4-03, IPP120N10S4-03OptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max (SMD version) 3.5mWID 120 AFeatures N-channel - Normal Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanch
ipb120n10s4-05 ipi120n10s4-05 ipp120n10s4-05.pdf

IPB120N10S4-05IPI120N10S4-05, IPP120N10S4-05OptiMOS-T2 Power-TransistorProduct SummaryVDS 100 VRDS(on),max (SMD version) 5.0mWID 120 AFeatures N-channel - Normal Level - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanch
ipb120n08s4-03 ipi120n08s4-03 ipp120n08s4-03.pdf

IPB120N08S4-03IPI120N08S4-03, IPP120N08S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 80 VDSR (SMD version) 2.5mWDS(on),maxI 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche tested
ipb120n06s4-03 ipi120n06s4-03 ipp120n06s4-03 ipp120n06s4 ipb120n06s4 ipi120n06s4-03.pdf

IPB120N06S4-03IPI120N06S4-03, IPP120N06S4-03OptiMOS-T2 Power-TransistorProduct SummaryV 60 VDSR (SMD version) 2.8mDS(on),max I 120 ADFeatures N-channel - Enhancement modePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green Product (RoHS compliant) 100% Avalanche teste
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: JCS4N60F | MTN50N06E3 | CPC3730 | STP3NA50 | SSFT4004 | SM3116NAF | IPI051N15N5
History: JCS4N60F | MTN50N06E3 | CPC3730 | STP3NA50 | SSFT4004 | SM3116NAF | IPI051N15N5



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