IPI120N10S4-03 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPI120N10S4-03

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 2460 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0039 Ohm

Encapsulados: TO262

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IPI120N10S4-03 datasheet

 ..1. Size:353K  infineon
 ipb120n10s4-03 ipi120n10s4-03 ipp120n10s4-03.pdf pdf_icon

IPI120N10S4-03

IPB120N10S4-03 IPI120N10S4-03, IPP120N10S4-03 OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS(on),max (SMD version) 3.5 mW ID 120 A Features N-channel - Normal Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanch

 1.1. Size:386K  infineon
 ipb120n10s4-05 ipi120n10s4-05 ipp120n10s4-05.pdf pdf_icon

IPI120N10S4-03

IPB120N10S4-05 IPI120N10S4-05, IPP120N10S4-05 OptiMOS -T2 Power-Transistor Product Summary VDS 100 V RDS(on),max (SMD version) 5.0 mW ID 120 A Features N-channel - Normal Level - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanch

 7.1. Size:225K  infineon
 ipb120n08s4-03 ipi120n08s4-03 ipp120n08s4-03.pdf pdf_icon

IPI120N10S4-03

IPB120N08S4-03 IPI120N08S4-03, IPP120N08S4-03 OptiMOS -T2 Power-Transistor Product Summary V 80 V DS R (SMD version) 2.5 mW DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche tested

 7.2. Size:170K  infineon
 ipb120n06s4-03 ipi120n06s4-03 ipp120n06s4-03 ipp120n06s4 ipb120n06s4 ipi120n06s4-03.pdf pdf_icon

IPI120N10S4-03

IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 OptiMOS -T2 Power-Transistor Product Summary V 60 V DS R (SMD version) 2.8 m DS(on),max I 120 A D Features N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 AEC Q101 qualified MSL1 up to 260 C peak reflow 175 C operating temperature Green Product (RoHS compliant) 100% Avalanche teste

MOSTRAR MÁS

Otros transistores... IPG20N10S4-36A, IPG20N10S4L-22, IPG20N10S4L-22A, IPG20N10S4L-35A, IPI08CN10NG, IPI100N12S3-05, IPI120N08S4-03, IPI120N08S4-04, IRFB4115, IPI120N10S4-05, IPI120P04P4-04, IPI120P04P4L-03, IPI16CN10NG, IPI50N12S3L-15, IPI70N12S3-11, IPI80N08S4-06, IPI80P03P4-05