IPI50N12S3L-15 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IPB50N12S3L-15IPI50N12S3L-15, IPP50N12S3L-15OptiMOS-T Power-TransistorProduct Summary VDS 120 V RDS(on),max (SMD version) 15.4 mW ID 50 A Features OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode Automotive AEC Q101 qualifiedPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 MSL1 up to 260C peak reflow 175C operating temper

IPB50N10S3L-16IPI50N10S3L-16, IPP50N10S3L-16OptiMOS-T Power-TransistorProduct SummaryV 100 VDSR (SMD version) 15.4mDS(on),max I 50 ADFeaturesPG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260C peak reflow 175C operating temperature Green product (RoHS compliant) 100% Aval

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE500V CoolMOS CE Power TransistorIPx50R380CE Data SheetRev. 2.0, 2010-08-27Final Industrial & Multimarket500V CoolMOS CE Power Transistor IPP50R380CE, IPA50R380CEIPI50R380CE1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (S

$ " " $ " " $ " " $$ " " $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 1 D S ) 5:3@@7> @AD?3> >7H7> 4 m . A@ ?3J /* S !J57>>7@F 93F7 5:3D97 J BDA6G5F "* ( D n)DS 07DK >AI A@ D7E;EF3@57 D n)S V AB7D3F;@9 F7?B7D3FGD7S +4 8D77 >736 B>3F;@9 - A$. 5A?B>;3@F1)S , G3>;8;76 355AD6;@9 FA &! ! 8AD F3D97F 3BB>;53F;A@S %673> 8AD :;9: 8D7CG7@5K EI;F5:;@9 3@6 EK@5:DA@AGE

IPI50R140CPCIMOS #:A0

IPI50R350CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @Tjmax 550 V!0 U )DK:GH ;>H / L ., + gR 0. 50 DS(on) maxU 2 AHF6 ADK HMU -7 ;F:: A:69 EA6H>C6CH PGTO2621)U . I6Ai;>:9 688DF9>CH8=

IPI50R299CPCIMOSE #:A0

IPI50R399CPCoolMOSTM Power TransistorProduct SummaryFeaturesV @Tjmax 560 V!0 V )DL:HI ;>I / M ., + gR 0. 99 DS(on) maxV 2 AIG6 ADL INV -7 ;G:: A:69 EA6I>C6CI PGTO2621)V . J6Ai;>:9 688DG9>CI8=>C

IPI50R250CPCIMOS #:A0

IPI50R199CPCIMOSE #:A0

isc N-Channel MOSFET Transistor IPI50R399CPFEATURESStatic drain-source on-resistance:RDS(on) 0.399Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

isc N-Channel MOSFET Transistor IPI50R140CPFEATURESStatic drain-source on-resistance:RDS(on) 0.14Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

isc N-Channel MOSFET Transistor IPI50R299CPFEATURESStatic drain-source on-resistance:RDS(on) 0.299Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

isc N-Channel MOSFET Transistor IPI50R350CPFEATURESStatic drain-source on-resistance:RDS(on) 0.35Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

isc N-Channel MOSFET Transistor IPI50R250CPFEATURESStatic drain-source on-resistance:RDS(on) 0.25Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

Isc N-Channel MOSFET Transistor IPI50R199CPFEATURESWith To-262(I2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V