IPL60R085P7 Todos los transistores

 

IPL60R085P7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPL60R085P7
   Código: 60R085P7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 154 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 39 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 51 nC
   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 37 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
   Paquete / Cubierta: VSON-4
 

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IPL60R085P7 Datasheet (PDF)

 ..1. Size:1367K  infineon
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IPL60R085P7

IPL60R085P7MOSFETThinPAK 8x8600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOS

 7.1. Size:1193K  infineon
 ipl60r060cfd7.pdf pdf_icon

IPL60R085P7

IPL60R060CFD7MOSFETThinPAK 8x8600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

 7.2. Size:1195K  infineon
 ipl60r095cfd7.pdf pdf_icon

IPL60R085P7

IPL60R095CFD7MOSFETThinPAK 8x8600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

 7.3. Size:1455K  infineon
 ipl60r065c7.pdf pdf_icon

IPL60R085P7

IPL60R065C7MOSFETThinPAK 8x8600V CoolMOS C7 Power TransistorCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.600V CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.The 600V C7 is the first technology eve

MOSTRAR MÁS

Otros transistores... IPI80N08S4-06 , IPI80P03P4-05 , IPI80P04P4-07 , IPI80P04P4L-04 , IPI80P04P4L-08 , IPL60R060CFD7 , IPL60R065C7 , IPL60R075CFD7 , AO3400 , IPL60R095CFD7 , IPL60R125P7 , IPL60R160CFD7 , IPL60R185C7 , IPL60R185P7 , IPL60R225CFD7 , IPLU250N04S4-1R7 , IPLU300N04S4-1R1 .

History: STB34NM60N | SI7384DP | IRFB260N | IRHYB67134CM | IRFB3307 | IRF7343PBF | NCEP030N85GU

 

 
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