IPL60R160CFD7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPL60R160CFD7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 95 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12.5 nS
Cossⓘ - Capacitancia de salida: 24 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
Paquete / Cubierta: VSON-4
- Selección de transistores por parámetros
IPL60R160CFD7 Datasheet (PDF)
ipl60r160cfd7.pdf

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Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: CP650 | WM02N08L | SWF2N70D | HGN035N08AL
History: CP650 | WM02N08L | SWF2N70D | HGN035N08AL



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