IPN60R1K0PFD7S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPN60R1K0PFD7S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 4.7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 6 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm

Encapsulados: SOT223

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IPN60R1K0PFD7S datasheet

 ..1. Size:1048K  infineon
 ipn60r1k0pfd7s.pdf pdf_icon

IPN60R1K0PFD7S

IPN60R1K0PFD7S MOSFET PG-SOT223 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d

 6.1. Size:1053K  infineon
 ipn60r1k5ce.pdf pdf_icon

IPN60R1K0PFD7S

IPN60R1K5CE MOSFET PG-SOT223 600V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting high

 8.1. Size:713K  infineon
 ipn60r2k0pfd7s.pdf pdf_icon

IPN60R1K0PFD7S

IPN60R2K0PFD7S MOSFET PG-SOT223 600V CoolMOS PFD7 SJ Power Device CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS PFD7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, motor d

 8.2. Size:1230K  infineon
 ipn60r360p7s.pdf pdf_icon

IPN60R1K0PFD7S

IPN60R360P7S MOSFET PG-SOT223 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSF

MOSTRAR MÁS

Otros transistores... IPL60R225CFD7, IPLU250N04S4-1R7, IPLU300N04S4-1R1, IPLU300N04S4-R8, IPN50R1K4CE, IPN50R3K0CE, IPN50R650CE, IPN50R800CE, IRF530, IPN60R1K5CE, IPN60R2K0PFD7S, IPN60R360P7S, IPN60R360PFD7S, IPN60R3K4CE, IPN60R600P7S, IPN60R600PFD7S, IPN65R1K5CE