IPN80R4K5P7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPN80R4K5P7
Código: 80R4K5
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 6 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 1.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 VQgⓘ - Carga de la puerta: 4 nC
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 3 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm
Paquete / Cubierta: SOT223
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Liste
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