IPN80R4K5P7 Todos los transistores

 

IPN80R4K5P7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPN80R4K5P7
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 3 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.5 Ohm
   Paquete / Cubierta: SOT223
 

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IPN80R4K5P7 Datasheet (PDF)

 ..1. Size:1031K  infineon
 ipn80r4k5p7.pdf pdf_icon

IPN80R4K5P7

IPN80R4K5P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(

 8.1. Size:1038K  infineon
 ipn80r2k4p7.pdf pdf_icon

IPN80R4K5P7

IPN80R2K4P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(

 8.2. Size:1023K  infineon
 ipn80r750p7.pdf pdf_icon

IPN80R4K5P7

IPN80R750P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(

 8.3. Size:1024K  infineon
 ipn80r600p7.pdf pdf_icon

IPN80R4K5P7

IPN80R600P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(

MOSTRAR MÁS

Otros transistores... IPN70R2K1CE , IPN70R360P7S , IPN70R600P7S , IPN70R750P7S , IPN70R900P7S , IPN80R1K2P7 , IPN80R1K4P7 , IPN80R2K4P7 , IRF2807 , IPN80R600P7 , IPN80R750P7 , IPN80R900P7 , IPN95R3K7P7 , IPP015N04N6 , IPP100N12S3-05 , IPP120N08S4-03 , IPP120N08S4-04 .

History: IRL540SPBF | IPP04CN10NG | WMO90N02T1 | WNM07N65 | IRFR9020 | IRLZ14L | SSP65R065SFD3

 

 
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