IPN80R600P7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPN80R600P7
   Código: 80R600
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Máxima disipación de potencia (Pd): 7.4 W
   Voltaje máximo drenador - fuente |Vds|: 800 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 8 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Tensión umbral entre puerta y fuente |Vgs(th)|: 3.5 V
   Carga de la puerta (Qg): 20 nC
   Tiempo de subida (tr): 8 nS
   Conductancia de drenaje-sustrato (Cd): 11 pF
   Resistencia entre drenaje y fuente RDS(on): 0.6 Ohm
   Paquete / Cubierta: SOT223

Búsqueda de reemplazo de MOSFET IPN80R600P7

IPN80R600P7 Datasheet (PDF)

..1. Size:1024K infineon
ipn80r600p7.pdf

IPN80R600P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(

8.1. Size:1038K infineon
ipn80r2k4p7.pdf

IPN80R2K4P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(

8.2. Size:1023K infineon
ipn80r750p7.pdf

IPN80R750P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(

8.3. Size:1037K infineon
ipn80r900p7.pdf

IPN80R900P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(

8.4. Size:1052K infineon
ipn80r1k4p7.pdf

IPN80R1K4P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(

8.5. Size:1031K infineon
ipn80r4k5p7.pdf

IPN80R4K5P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(

8.6. Size:1043K infineon
ipn80r1k2p7.pdf

IPN80R1K2P7MOSFETPG-SOT223800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CDS(

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