IPN80R600P7 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPN80R600P7

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 7.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 11 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: SOT223

 Búsqueda de reemplazo de IPN80R600P7 MOSFET

- Selecciónⓘ de transistores por parámetros

 

IPN80R600P7 datasheet

 ..1. Size:1024K  infineon
 ipn80r600p7.pdf pdf_icon

IPN80R600P7

IPN80R600P7 MOSFET PG-SOT223 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(

 8.1. Size:1038K  infineon
 ipn80r2k4p7.pdf pdf_icon

IPN80R600P7

IPN80R2K4P7 MOSFET PG-SOT223 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(

 8.2. Size:1023K  infineon
 ipn80r750p7.pdf pdf_icon

IPN80R600P7

IPN80R750P7 MOSFET PG-SOT223 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(

 8.3. Size:1037K  infineon
 ipn80r900p7.pdf pdf_icon

IPN80R600P7

IPN80R900P7 MOSFET PG-SOT223 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(

MOSTRAR MÁS

Otros transistores... IPN70R360P7S, IPN70R600P7S, IPN70R750P7S, IPN70R900P7S, IPN80R1K2P7, IPN80R1K4P7, IPN80R2K4P7, IPN80R4K5P7, IRFZ24N, IPN80R750P7, IPN80R900P7, IPN95R3K7P7, IPP015N04N6, IPP100N12S3-05, IPP120N08S4-03, IPP120N08S4-04, IPP120N10S4-03