IPP60R022S7 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP60R022S7

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 100 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 89 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.022 Ohm

Encapsulados: TO220

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IPP60R022S7 datasheet

 ..1. Size:1595K  infineon
ipp60r022s7.pdf pdf_icon

IPP60R022S7

IPP60R022S7 MOSFET PG-TO 220 600V CoolMOS SJ S7 Power Device IPP60R022S7 enables the best price performance for low frequency tab switching applications. CoolMOS S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS S7 is optimized for static switching and high current applications. It is an ideal fit for solid state

 7.1. Size:1890K  infineon
ipp60r040c7.pdf pdf_icon

IPP60R022S7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPP60R040C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPP60R040C7 TO-220 1 Description CoolMOS C7 is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle a

 7.2. Size:1879K  infineon
ipp60r099c7.pdf pdf_icon

IPP60R022S7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPP60R099C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPP60R099C7 TO-220 1 Description CoolMOS C7 is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle a

 7.3. Size:1669K  infineon
ipp60r070cfd7.pdf pdf_icon

IPP60R022S7

IPP60R070CFD7 MOSFET PG-TO 220 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching application

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