IPS70R1K4P7S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPS70R1K4P7S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 22.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 16 V

|Id|ⓘ - Corriente continua de drenaje: 4 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.9 nS

Cossⓘ - Capacitancia de salida: 3 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm

Encapsulados: TO251

 Búsqueda de reemplazo de IPS70R1K4P7S MOSFET

- Selecciónⓘ de transistores por parámetros

 

IPS70R1K4P7S datasheet

 ..1. Size:1168K  infineon
 ips70r1k4p7s.pdf pdf_icon

IPS70R1K4P7S

IPS70R1K4P7S MOSFET IPAK SL 700V CoolMOS P7 Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting,

 5.1. Size:1056K  infineon
 ipd70r1k4ce ips70r1k4ce.pdf pdf_icon

IPS70R1K4P7S

IPD70R1K4CE, IPS70R1K4CE MOSFET DPAK IPAK SL 700V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer and Ligh

 5.2. Size:261K  inchange semiconductor
 ips70r1k4ce.pdf pdf_icon

IPS70R1K4P7S

isc N-Channel MOSFET Transistor IPS70R1K4CE FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 8.1. Size:926K  infineon
 ips70r360p7s.pdf pdf_icon

IPS70R1K4P7S

IPS70R360P7S MOSFET IPAK SL 700V CoolMOS P7 Power Transistor tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS P7 is an optimized platform tailored to target cost sensitive applications in consumer markets such as charger, adapter, lighting,

MOSTRAR MÁS

Otros transistores... IPP80R900P7, IPS60R1K0CE, IPS60R1K0PFD7S, IPS60R210PFD7S, IPS60R280PFD7S, IPS60R2K1CE, IPS60R360PFD7S, IPS60R600PFD7S, IRF640, IPS70R360P7S, IPS70R600P7S, IPS70R900P7S, IPS80R1K2P7, IPS80R1K4P7, IPS80R2K0P7, IPS80R2K4P7, IPS80R600P7