IPS80R2K4P7 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPS80R2K4P7

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 22 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 3.8 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.4 Ohm

Encapsulados: TO251

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IPS80R2K4P7 datasheet

 ..1. Size:950K  infineon
 ips80r2k4p7.pdf pdf_icon

IPS80R2K4P7

IPS80R2K4P7 MOSFET IPAK SL 800V CoolMOS P7 Power Transistor tab The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C

 6.1. Size:954K  infineon
 ips80r2k0p7.pdf pdf_icon

IPS80R2K4P7

IPS80R2K0P7 MOSFET IPAK SL 800V CoolMOS P7 Power Transistor tab The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C

 8.1. Size:962K  infineon
 ips80r1k2p7.pdf pdf_icon

IPS80R2K4P7

IPS80R1K2P7 MOSFET IPAK SL 800V CoolMOS P7 Power Transistor tab The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C

 8.2. Size:951K  infineon
 ips80r900p7.pdf pdf_icon

IPS80R2K4P7

IPS80R900P7 MOSFET IPAK SL 800V CoolMOS P7 Power Transistor tab The latest 800V CoolMOS P7 series sets a new benchmark in 800V super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C

MOSTRAR MÁS

Otros transistores... IPS60R600PFD7S, IPS70R1K4P7S, IPS70R360P7S, IPS70R600P7S, IPS70R900P7S, IPS80R1K2P7, IPS80R1K4P7, IPS80R2K0P7, IRFB4227, IPS80R600P7, IPS80R750P7, IPS80R900P7, IPSA70R1K2P7S, IPSA70R1K4CE, IPSA70R1K4P7S, IPSA70R2K0CE, IPSA70R2K0P7S