IPU80R600P7 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPU80R600P7

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 60 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 11 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO251

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IPU80R600P7 datasheet

 ..1. Size:1213K  infineon
 ipu80r600p7.pdf pdf_icon

IPU80R600P7

IPU80R600P7 MOSFET IPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(

 8.1. Size:1219K  infineon
 ipu80r2k0p7.pdf pdf_icon

IPU80R600P7

IPU80R2K0P7 MOSFET IPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(

 8.2. Size:1228K  infineon
 ipu80r1k4p7.pdf pdf_icon

IPU80R600P7

IPU80R1K4P7 MOSFET IPAK 800V CoolMOS P7 Power Transistor The latest 800V CoolMOS P7 series sets a new benchmark in 800V tab super junction technologies and combines best-in-class performance with state of the art ease-of-use, resulting from Infineon s over 18 years pioneering super junction technology innovation. Features Best-in-class FOM R * E ; reduced Q , C , and C DS(

 8.3. Size:2292K  infineon
 ipd80r1k4ce ipu80r1k4ce.pdf pdf_icon

IPU80R600P7

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 800V CoolMOS CE Power Transistor IPx80R1K4CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 800V CoolMOS CE Power Transistor IPD80R1K4CE, IPU80R1K4CE DPAK IPAK 1 Description tab tab CoolMOS CE is a revolutionary technology for high voltage power MOSFETs. The high voltage capability combine

MOSTRAR MÁS

Otros transistores... IPT60R102G7, IPT60R150G7, IPT65R033G7, IPT65R105G7, IPT65R195G7, IPU80R1K4P7, IPU80R2K0P7, IPU80R2K4P7, IRF530, IPU80R750P7, IPU95R450P7, IPU95R750P7, IPW60R024CFD7, IPW60R031CFD7, IPW60R037CSFD, IPW60R040CFD7, IPW60R045P7