IPW60R040CFD7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPW60R040CFD7
Código: 60R040F7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 227 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 50 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4.5 V
Carga de la puerta (Qg): 109 nC
Tiempo de subida (tr): 19 nS
Conductancia de drenaje-sustrato (Cd): 85 pF
Resistencia entre drenaje y fuente RDS(on): 0.04 Ohm
Paquete / Cubierta: TO247
Búsqueda de reemplazo de MOSFET IPW60R040CFD7
IPW60R040CFD7 Datasheet (PDF)
ipw60r040cfd7.pdf
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ipw60r040c7.pdf
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ipw60r040c7.pdf
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ipw60r045cpa.pdf
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ipw60r041p6.pdf
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ipw60r045p7.pdf
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ipw60r041p6.pdf
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ipw60r045cp.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R045CP IIPW60R045CPFEATURESStatic drain-source on-resistance:RDS(on)45mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
ipw60r041c6.pdf
isc N-Channel MOSFET Transistor IPW60R041C6 IIPW60R041C6FEATURESStatic drain-source on-resistance:RDS(on)41mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast SwitchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600 VDSSV
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