IPW80R290C3A Todos los transistores

 

IPW80R290C3A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPW80R290C3A
   Código: 8R290C3A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 227 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.9 V
   Qgⓘ - Carga de la puerta: 88 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 94 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm
   Paquete / Cubierta: TO247

 Búsqueda de reemplazo de MOSFET IPW80R290C3A

 

IPW80R290C3A Datasheet (PDF)

 ..1. Size:214K  infineon
ipw80r290c3a.pdf

IPW80R290C3A
IPW80R290C3A

IPW80R290C3ACoolMOS Power TransistorProduct SummaryV 800 VDSR 0.29DS(on)maxQ 91 nCg,typFeatures New revolutionary high voltage technologyPG-TO247-3 Ultra low gate charge and ultra low effective capacitances Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified RoHS compliantCoolMOS C3A designed for: DC/DC c

 7.1. Size:930K  infineon
ipw80r280p7.pdf

IPW80R290C3A
IPW80R290C3A

IPW80R280P7MOSFETPG-TO 247-3800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CD

 8.1. Size:950K  infineon
ipw80r360p7.pdf

IPW80R290C3A
IPW80R290C3A

IPW80R360P7MOSFETPG-TO 247-3800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CD

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: BSC123N08NS3G | BL3N100E-D

 

 
Back to Top

 


History: BSC123N08NS3G | BL3N100E-D

IPW80R290C3A
  IPW80R290C3A
  IPW80R290C3A
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top