IPW80R290C3A Todos los transistores

 

IPW80R290C3A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPW80R290C3A
   Código: 8R290C3A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 227 W
   Voltaje máximo drenador - fuente |Vds|: 800 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 17 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 3.9 V
   Carga de la puerta (Qg): 88 nC
   Tiempo de subida (tr): 15 nS
   Conductancia de drenaje-sustrato (Cd): 94 pF
   Resistencia entre drenaje y fuente RDS(on): 0.29 Ohm
   Paquete / Cubierta: TO247

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IPW80R290C3A Datasheet (PDF)

 ..1. Size:214K  infineon
ipw80r290c3a.pdf

IPW80R290C3A
IPW80R290C3A

IPW80R290C3ACoolMOS Power TransistorProduct SummaryV 800 VDSR 0.29DS(on)maxQ 91 nCg,typFeatures New revolutionary high voltage technologyPG-TO247-3 Ultra low gate charge and ultra low effective capacitances Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified RoHS compliantCoolMOS C3A designed for: DC/DC c

 7.1. Size:930K  infineon
ipw80r280p7.pdf

IPW80R290C3A
IPW80R290C3A

IPW80R280P7MOSFETPG-TO 247-3800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CD

 8.1. Size:950K  infineon
ipw80r360p7.pdf

IPW80R290C3A
IPW80R290C3A

IPW80R360P7MOSFETPG-TO 247-3800V CoolMOS P7 Power TransistorThe latest 800V CoolMOS P7 series sets a new benchmark in 800Vsuper junction technologies and combines best-in-class performance withstate of the art ease-of-use, resulting from Infineons over 18 yearspioneering super junction technology innovation.Features Best-in-class FOM R * E ; reduced Q , C , and CD

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