IPZ40N04S5-5R4 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPZ40N04S5-5R4

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 48 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 2 nS

Cossⓘ - Capacitancia de salida: 275 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0054 Ohm

Encapsulados: TSDSON-8-32

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IPZ40N04S5-5R4 datasheet

 ..1. Size:317K  infineon
 ipz40n04s5-5r4.pdf pdf_icon

IPZ40N04S5-5R4

IPZ40N04S5-5R4 OptiMOS -5 Power-Transistor Product Summary VDS 40 V RDS(on),max 5.4 mW ID 40 A Features PG-TSDSON-8-32 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified 1 MSL1 up to 260 C peak reflow 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche teste

 3.1. Size:323K  infineon
 ipz40n04s5-8r4.pdf pdf_icon

IPZ40N04S5-5R4

IPZ40N04S5-8R4 OptiMOS -5 Power-Transistor Product Summary VDS 40 V RDS(on),max 8.4 mW ID 40 A Features PG-TSDSON-8-32 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified 1 MSL1 up to 260 C peak reflow 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche teste

 3.2. Size:311K  infineon
 ipz40n04s5-3r1.pdf pdf_icon

IPZ40N04S5-5R4

IPZ40N04S5-3R1 OptiMOS -5 Power-Transistor Product Summary VDS 40 V RDS(on),max 3.1 mW ID 40 A Features PG-TSDSON-8-33 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Normal Level AEC Q101 qualified 1 MSL1 up to 260 C peak reflow 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche teste

 4.1. Size:325K  infineon
 ipz40n04s5l-7r4.pdf pdf_icon

IPZ40N04S5-5R4

IPZ40N04S5L-7R4 OptiMOS -5 Power-Transistor Product Summary VDS 40 V RDS(on),max 7.4 mW ID 40 A Features PG-TSDSON-8-32 OptiMOS - power MOSFET for automotive applications N-channel - Enhancement mode - Logic Level AEC Q101 qualified 1 MSL1 up to 260 C peak reflow 175 C operating temperature 1 Green Product (RoHS compliant) 100% Avalanche teste

MOSTRAR MÁS

Otros transistores... IPW60R090CFD7, IPW60R105CFD7, IPW60R125CFD7, IPW60R180P7, IPW80R280P7, IPW80R290C3A, IPW80R360P7, IPZ40N04S5-3R1, AO3407, IPZ40N04S5-8R4, IPZ40N04S5L-7R4, IPZ60R060C7, IPZ60R070P6, IPZA60R037P7, IPZA60R045P7, IPZA60R060P7, IPZA60R080P7