IPZA60R120P7 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPZA60R120P7
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 95 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 26 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 27 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
Encapsulados: TO247-4
Búsqueda de reemplazo de IPZA60R120P7 MOSFET
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IPZA60R120P7 datasheet
ipza60r120p7.pdf
IPZA60R120P7 MOSFET PG-TO 247-4-3 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ
ipza60r180p7.pdf
IPZA60R180P7 MOSFET PG-TO 247-4-3 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ
ipza60r080p7.pdf
IPZA60R080P7 MOSFET PG-TO 247-4-3 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ
ipza60r060p7.pdf
IPZA60R060P7 MOSFET PG-TO 247-4-3 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ
Otros transistores... IPZ40N04S5-8R4 , IPZ40N04S5L-7R4 , IPZ60R060C7 , IPZ60R070P6 , IPZA60R037P7 , IPZA60R045P7 , IPZA60R060P7 , IPZA60R080P7 , P60NF06 , IPZA60R180P7 , IQE006NE2LM5 , IQE006NE2LM5CG , IRF1310NLPBF , IRF135SA204 , IRF150P220 , IRF150P221 , IRF200S234 .
History: HFW9N50
History: HFW9N50
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