IRF6623PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF6623PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 42 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 55 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 VQgⓘ - Carga de la puerta: 11 nC
trⓘ - Tiempo de subida: 40 nS
Cossⓘ - Capacitancia de salida: 630 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
Paquete / Cubierta: DIRECTFET
Búsqueda de reemplazo de MOSFET IRF6623PBF
IRF6623PBF Datasheet (PDF)
irf6623pbf irf6623trpbf.pdf
PD - 97085IRF6623PbFIRF6623TRPbFl RoHS Compliant DirectFET Power MOSFET l Lead-Free (Qualified up to 260C Reflow)VDSS RDS(on) maxQg(typ.)l Application Specific MOSFETs20V 5.7m@VGS = 10V 11nCl Ideal for CPU Core DC-DC Converters9.7m@VGS = 4.5Vl Low Conduction Lossesl High Cdv/dt Immunityl Low Profile (
irf6623.pdf
PD - 95824BIRF6623HEXFET Power MOSFETl Application Specific MOSFETsl Ideal for CPU Core DC-DC ConvertersVDSS RDS(on) maxQg(typ.)l Low Conduction Losses20V 5.7m@VGS = 10V 11nCl Low Switching Losses9.7m@VGS = 4.5Vl Low Profile (
irf6628pbf.pdf
PD - 97234IRF6628PbFIRF6628TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant l Lead-Free (Qualified up to 260C Reflow) VDSS VGS RDS(on) RDS(on) l Application Specific MOSFETs25V max 20V max 1.9m@ 10V 2.5m@ 4.5Vl Ideal for CPU Core DC-DC ConvertersQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Low Conduction Losses31nC 12nC 4.1nC
irf6620.pdf
PD - 95823AIRF6620HEXFET Power MOSFETl Application Specific MOSFETsl Ideal for CPU Core DC-DC ConvertersVDSS RDS(on) maxQg(typ.)l Low Conduction Losses20V 2.7m@VGS = 10V 28nCl Low Switching Losses3.6m@VGS = 4.5Vl Low Profile (
irf6626.pdf
PD - 96976DIRF6626DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bromide l Low Profile (
irf6629pbf.pdf
PD - 97235IRF6629PbFIRF6629TRPbFDirectFET Power MOSFET l RoHs Compliant Typical values (unless otherwise specified)l Lead-Free (Qualified up to 260C Reflow)VDSS VGS RDS(on) RDS(on) l Application Specific MOSFETs25V max 20V max 1.6m@ 10V 2.1m@ 4.5Vl Ideal for CPU Core DC-DC ConvertersQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Low Conduction Losses34nC 11nC 4.2n
irf6622pbf.pdf
PD - 97244IRF6622PbFIRF6622TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant VDSS VGS RDS(on) RDS(on) l Lead-Free (Qualified up to 260C Reflow)25V max 20V max 4.9m@ 10V 6.8m@ 4.5Vl Application Specific MOSFETsQg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Ideal for CPU Core DC-DC Converters11nC 3.8nC 1.6nC 7.1nC 7.7nC 1.8Vl Lo
irf6621.pdf
PD - 97005AIRF6621DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHs Compliant Containing No Lead and Bromide VDSS VGS RDS(on) RDS(on) l Low Profile (
irf6620pbf irf6620trpbf.pdf
PD - 97092IRF6620PbFIRF6620TRPbFDirectFET Power MOSFET l RoHS Compliant VDSS RDS(on) maxQg(typ.)l Lead-Free (Qualified up to 260C Reflow)l Application Specific MOSFETs20V 2.7m@VGS = 10V 28nCl Ideal for CPU Core DC-DC Converters3.6m@VGS = 4.5Vl Low Conduction Lossesl High Cdv/dt Immunityl Low Profile (
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
