IRF6665PBF Todos los transistores

 ..1. Size:233K  international rectifier
 irf6665pbf irf6665trpbf.pdf

PD - 97230A IRF6665PbF DIGITAL AUDIO MOSFET IRF6665TRPbF Key Parameters Features VDS 100 V Latest MOSFET Silicon technology Key parameters optimized for Class-D audio amplifier RDS(on) typ. @ VGS = 10V 53 m applications Qg typ. 8.7 nC Low RDS(on) for improved efficiency Low Qg for better THD and improved efficiency RG(int) typ. 1.9 Low Qrr for better THD

 7.1. Size:606K  international rectifier
 irf6665.pdf

 8.1. Size:247K  international rectifier
 irf6662pbf irf6662trpbf.pdf

PD - 97243A IRF6662PbF IRF6662TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) RoHs Compliant RDS(on) VDSS VGS Lead-Free (Qualified up to 260 C Reflow) 17.5m @ 10V 100V max 20V max Application Specific MOSFETs Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) Ideal for High Performance Isolated Converter Primary Switch Socket 22nC 6.8nC 1.2nC 50nC 11nC

 8.2. Size:277K  international rectifier
 irf6662.pdf

PD - 97039A IRF6662 DirectFET Power MOSFET Typical values (unless otherwise specified) Lead and Bromide Free VDSS VGS RDS(on) Low Profile (

 8.3. Size:630K  international rectifier
 irf6668pbf irf6668trpbf.pdf

PD - 97232A IRF6668PbF IRF6668TRPbF DirectFET Power MOSFET l RoHs Compliant Typical values (unless otherwise specified) l Lead-Free (Qualified up to 260 C Reflow) RDS(on) VDSS VGS l Application Specific MOSFETs 12m @ 10V l Ideal for High Performance Isolated Converter 80V max 20V max Primary Switch Socket Qg tot Qgd Qgs2 Qrr Qoss Vgs(th) l Optimized for Synchronous