IRF6775MTRPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF6775MTRPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 89 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 28 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.8 nS
Cossⓘ - Capacitancia de salida: 193 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.056 Ohm
Paquete / Cubierta: DIRECTFET
Búsqueda de reemplazo de MOSFET IRF6775MTRPBF
IRF6775MTRPBF Datasheet (PDF)
irf6775mtrpbf.pdf
DIGITAL AUDIO MOSFETIRF6775MTRPbFKey ParametersFeaturesVDS 150 V Latest MOSFET Silicon technology Key parameters optimized for Class-D audio amplifierRDS(on) typ. @ VGS = 10V 47 m applications Low RDS(on) for improved efficiency Qg typ. 25.0 nC Low Qg for better THD and improved efficiency RG(int) max. 3.0 Low Qrr for better THD and lower EMI Low pack
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irf6702m2d.pdf
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irf6722spbf.pdf
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irf6785m.pdf
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Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2SK3635
History: 2SK3635
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