IRF7103PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF7103PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
   Paquete / Cubierta: SO8

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IRF7103PBF Datasheet (PDF)

..1. Size:303K infineon
irf7103pbf.pdf

PD -95037BIRF7103PbFHEXFET Power MOSFETl Adavanced Process Technologyl Ultra Low On-Resistance1 8S1 D1l Dual N-Channel MOSFETVDSS = 50V2 7G1 D1l Surface Mount3 6l Available in Tape & Reel S2 D2RDS(on) = 0.130l Dynamic dv/dt Rating 4 5G2 D2l Fast SwitchingID = 3.0ATop Viewl Lead-FreeDescriptionThe SO-8 has been modified through a customizedleadf

0.1. Size:275K international rectifier
irf7103pbf-1.pdf

IRF7103PbF-1HEXFET Power MOSFETVDS 50 V1 8S1 D1RDS(on) max 0.13 2 7G1 D1(@V = 10V)GS3 6S2 D2RDS(on) max 0.20 4 5(@V = 4.5V) G2 D2GSQg (typical) 12 nCSO-8Top ViewID 3.0 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier Manufacturin

7.1. Size:169K 1
irf7103q.pdf

PD - 93944CIRF7103QAUTOMOTIVE MOSFETTypical Applications Anti-lock Braking Systems (ABS) HEXFET Power MOSFET Electronic Fuel Injection)))) Power Doors, Windows & Seats VDSS RDS(on) max (m) IDBenefits 50V 130@VGS = 10V 3.0A Advanced Process Technology200@VGS = 4.5V 1.5A Dual N-Channel MOSFET Ultra Low On-Resistance 175C Operating Temperature R

7.2. Size:402K 1
auirf7103q.pdf

AUTOMOTIVE GRADEAUIRF7103QHEXFET Power MOSFETFeaturesl Advanced Planar Technologyl Dual N Channel MOSFET1 8l Low On-Resistance S1 D1V(BR)DSS50V2 7l Dynamic dV/dT Rating G1 D13 6l 175C Operating TemperatureS2 D2RDS(on) max.130m4 5l Fast SwitchingG2 D2l Lead-Free, RoHS CompliantIDTop View 3.0Al Automotive Qualified*DescriptionSpecifically d

7.3. Size:304K international rectifier
irf7103ipbf.pdf

PD -96085AIRF7103IPbFHEXFET Power MOSFETl Adavanced Process Technology1 8l Ultra Low On-Resistance S1 D1VDSS = 50V2 7l Dual N-Channel MOSFETG1 D1l Surface Mount3 6S2 D2RDS(on) = 0.130l Available in Tape & Reel4 5G2 D2l Dynamic dv/dt RatingID = 3.0Al Fast SwitchingTop Viewl Lead-FreeDescriptionThe SO-8 has been modified through a customizedlea

7.4. Size:169K international rectifier
irf7103q.pdf

7.5. Size:169K international rectifier
irf7103.pdf

PD - 9.1095BIRF7103HEXFET Power MOSFET Adavanced Process Technology1 8 Ultra Low On-Resistance D1S1VDSS = 50V Dual N-Channel MOSFET 2 7G1 D1 Surface Mount3 6S2 D2RDS(on) = 0.130 Available in Tape & Reel4 5G2 D2 Dynamic dv/dt RatingID = 3.0A Fast SwitchingTop ViewDescriptionFourth Generation HEXFETs from InternationalRectifier utilize advanced p

7.6. Size:439K infineon
auirf7103q.pdf

AUTOMOTIVE GRADE AUIRF7103Q VDSS Features 1 8S1 D1 50V Advanced Planar Technology 2 7G1 D1RDS(on) max. Dual N Channel MOSFET 3 6S2 D2130m4 Low On-Resistance 5G2 D2ID Logic Level Gate Drive 3.0A Top View Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

7.7. Size:899K cn vbsemi
irf7103tr.pdf

IRF7103TRwww.VBsemi.twDual N-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) 60 100 % Rg and UIS testedRDS(on) () at VGS = 10 V 0.040RDS(on) () at VGS = 4.5 V 0.055ID (A) per leg 7Configuration DualSO-8 DualD2D1 D2D2 5D16D178G1 G24G233S1S2S2 S222GG111N-Channel MOSFET N-Channe

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