IRF7301PBF Todos los transistores

 

IRF7301PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF7301PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 2 W

Tensión drenaje-fuente |Vds|: 20 V

Tensión compuerta-fuente |Vgs|: 12 V

Corriente continua de drenaje |Id|: 5.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 0.7(min) V

Carga de compuerta (Qg): 20(max) nC

Tiempo de elevación (tr): 42 nS

Conductancia de drenaje-sustrato (Cd): 280 pF

Resistencia drenaje-fuente RDS(on): 0.05 Ohm

Empaquetado / Estuche: SO8

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IRF7301PBF Datasheet (PDF)

0.1. irf7301pbf.pdf Size:237K _infineon

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PD - 95176IRF7301PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance1 8l Dual N-Channel Mosfet S1 D1VDSS = 20Vl Surface Mount 2 7G1 D1l Available in Tape & Reel3 6S2 D2l Dynamic dv/dt Rating4 5l Fast SwitchingG2 D2RDS(on) = 0.050l Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced

7.1. irf7301.pdf Size:113K _international_rectifier

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PD - 9.1238CIRF7301HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance1 8S1 D1 Dual N-Channel MosfetVDSS = 20V2 7G1 D1 Surface Mount3 6 Available in Tape & ReelS2 D2 Dynamic dv/dt Rating45G2 D2RDS(on) = 0.050 Fast SwitchingT op V iewDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtec

 8.1. irf7304q.pdf Size:252K _1

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PD - 96104IRF7304QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance1 8S1 D1l Dual P Channel MOSFETVDSS = -20V2 7G1 D1l Surface Mountl Available in Tape & Reel3 6S2 D2l 150C Operating Temperature45G2 D2l Automotive [Q101] Qualified RDS(on) = 0.090l Lead-FreeTop ViewDescriptionSpecifically designed for Automotive appl

8.2. auirf7309q.pdf Size:456K _1

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AUTOMOTIVE GRADE AUIRF7309Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1 Low On-Resistance 2 7VDSS 30V -30V G1 D1 Logic Level Gate Drive 3 6S2 D2 Dual N and P Channel MOSFET RDS(on) max. 0.05 0.1045G2 D2 Dynamic dv/dt Rating P-CHANNEL MOSFET 150C Operating Temperature Top ViewID 4.7A -3.5A

 8.3. auirf7304q.pdf Size:517K _1

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AUTOMOTIVE GRADE AUIRF7304Q Features HEXFET Power MOSFET Advanced Planar Technology VDSS 1 8 Low On-Resistance S1 D1 -20V 2 7G1 D1 Dual P Channel MOSFET RDS(on) max. 0.0903 6S2 D2 Dynamic dv/dt Rating 4 5ID G2 D2-4.3A Logic Level 150C Operating Temperature Top View Fast Switching Lead-Free, RoHS Compliant

8.4. auirf7303q.pdf Size:578K _1

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AUTOMOTIVE GRADE AUIRF7303Q VDSS Features 1 8S1 D1 30V Advanced Planar Technology 2 7G1 D1RDS(on) max. Dual N Channel MOSFET 3 6S2 D20.054 Low On-Resistance 5G2 D2ID Logic Level Gate Drive 5.3A Top View Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

 8.5. irf730 1.pdf Size:59K _philips

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Philips Semiconductors Product specification PowerMOS transistor IRF730 Avalanche energy ratedFEATURES SYMBOL QUICK REFERENCE DATAd Repetitive Avalanche Rated Fast switching VDSS = 400 V High thermal cycling performance Low thermal resistance ID = 7.2 AgRDS(ON) 1 sGENERAL DESCRIPTION PINNING SOT78 (TO220AB)N-channel, enhancement mode PIN DESCRIPTION

8.6. irf730 irf731 irf732 irf733-fi.pdf Size:486K _st

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8.7. irf730.pdf Size:255K _st

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IRF730N-channel 400V - 0.75 - 5.5A TO-220PowermeshII Power MOSFETGeneral featuresType VDSS RDS(on) IDIRF730 400V

8.8. irf730.pdf Size:177K _fairchild_semi

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8.9. irf730b.pdf Size:898K _fairchild_semi

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November 2001IRF730B/IRFS730B400V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 5.5A, 400V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 25 nC)planar, DMOS technology. Low Crss ( typical 20 pF)This advanced technology has been especially tailored to

8.10. irf7309qpbf.pdf Size:1962K _international_rectifier

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PD - 96135AIRF7309QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceN-CHANNEL MOSFET1 8 N-Ch P-Chl Dual N and P Channel MOSFETS1 D1l Surface Mount2 7G1 D1l Available in Tape & ReelVDSS 30V -30V3 6l 150C Operating TemperatureS2 D2l Lead-Free45RDS(on) 0.050 0.10G2 D2P-CHANNEL MOSFETDescriptionTop ViewThese HEXF

8.11. irf7304qpbf.pdf Size:252K _international_rectifier

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PD - 96104IRF7304QPbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance1 8S1 D1l Dual P Channel MOSFETVDSS = -20V2 7G1 D1l Surface Mountl Available in Tape & Reel3 6S2 D2l 150C Operating Temperature45G2 D2l Automotive [Q101] Qualified RDS(on) = 0.090l Lead-FreeTop ViewDescriptionSpecifically designed for Automotive appl

8.12. irf730as.pdf Size:149K _international_rectifier

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PD-93772ASMPS MOSFETIRF730AS/LHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply (SMPS) Uninterruptable Power Supply 400V 1.0 5.5A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance and D 2 TO-262 PakAvalanche

8.13. irf7304pbf-1.pdf Size:232K _international_rectifier

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IRF7304PbF-1HEXFET Power MOSFETVDS -20 V1 8S1 D1RDS(on) max 0.09 2 7(@V = -4.5V) G1 D1GSQg 22 nC3 6S2 D2ID 4 5-4.3 AG2 D2(@T = 25C)ASO-8Top ViewFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentall

8.14. irf730as-l.pdf Size:309K _international_rectifier

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PD-95114SMPS MOSFETIRF730AS/LPbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 400V 1.0 5.5Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and D 2 TO-

8.15. irf730pbf.pdf Size:2214K _international_rectifier

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PD - 94977IRF730PbF Lead-Free02/03/04Document Number: 91047 www.vishay.com1Downloaded from Elcodis.com electronic components distributor IRF730PbFDocument Number: 91047 www.vishay.com2Downloaded from Elcodis.com electronic components distributor IRF730PbFDocument Number: 91047 www.vishay.com3Downloaded from Elcodis.com electronic components distributor IRF730

8.16. irf7307qpbf.pdf Size:302K _international_rectifier

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PD - 96106IRF7307QPbFHEXFET Power MOSFETl Advanced Process TechnologyN-CHANNEL MOSFET1 8l Ultra Low On-Resistance S1 D1N-Ch P-Chl Dual N and P Channel MOSFET 2 7G1 D1l Surface Mount3 6S2 D2VDSS 20V -20Vl Available in Tape & Reel4 5G2 D2l 150C Operating TemperatureP-CHANNEL MOSFETl Automotive [Q101] QualifiedTop View RDS(on) 0.050 0.090l Lead-F

8.17. irf7309ipbf.pdf Size:1799K _international_rectifier

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PD - 96086IRF7309IPbF Lead-FreeDescriptionwww.irf.com 107/07/06IRF7309IPbF2 www.irf.comIRF7309IPbFwww.irf.com 3IRF7309IPbF4 www.irf.comIRF7309IPbFwww.irf.com 5IRF7309IPbF6 www.irf.comIRF7309IPbFwww.irf.com 7IRF7309IPbF8 www.irf.comIRF7309IPbFPeak Diode Recovery dv/dt Test Circuit+Circuit Layout Considerations Low Stray Inductance

8.18. irf7309.pdf Size:162K _international_rectifier

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PD - 9.1243BIRF7309PRELIMINARYHEXFET Power MOSFETGeneration V TechnologyN-CHANNEL MOSFETUltra Low On-Resistance1 8 N-Ch P-ChS1 D1Dual N and P Channel Mosfet2 7G1 D1Surface MountVDSS 30V -30VAvailable in Tape & Reel 3 6S2 D2Dynamic dv/dt Rating45G2 D2Fast SwitchingP-CHANNEL MOSFET RDS(on) 0.050 0.10Top ViewDescriptionFifth Generation HEXFET

8.19. irf7307.pdf Size:194K _international_rectifier

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PD - 9.1242BIRF7307HEXFET Power MOSFET Generation V TechnologyN -C HAN NEL M O SF ET1 8 Ultra Low On-ResistanceS1 D1N-Ch P-Ch Dual N and P Channel Mosfet 2 7G1 D1 Surface Mount3 6S2 D2 VDSS 20V -20V Available in Tape & Reel4 5G2 D2 Dynamic dv/dt RatingP-CH ANNEL MOSFET Fast SwitchingTop View RDS(on) 0.050 0.090DescriptionFifth Generation HEXFE

8.20. irf730a.pdf Size:376K _international_rectifier

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PD - 94976SMPS MOSFETIRF730APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptable Power Supply 400V 1.0 5.5Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and dynamicdv/dt Ruggednessl Fully Characterized Capacitance and Avalanch

8.21. irf730.pdf Size:178K _international_rectifier

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8.22. irf730s.pdf Size:895K _international_rectifier

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PD - 95115IRF730SPbF Lead-Free3/16/04Document Number: 91048 www.vishay.com1IRF730SPbFDocument Number: 91048 www.vishay.com2IRF730SPbFDocument Number: 91048 www.vishay.com3IRF730SPbFDocument Number: 91048 www.vishay.com4IRF730SPbFDocument Number: 91048 www.vishay.com5IRF730SPbFDocument Number: 91048 www.vishay.com6IRF730SPbFD2Pak Package Outli

8.23. irf7303.pdf Size:111K _international_rectifier

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PD - 9.1239DIRF7303HEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-Resistance D1S1VDSS = 30V Dual N-Channel Mosfet 2 7G1 D1 Surface Mount3 6S2 D2 Available in Tape & Reel4 5G2 D2RDS(on) = 0.050 Dynamic dv/dt Rating Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techniq

8.24. irf7306.pdf Size:113K _international_rectifier

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PD - 9.1241CIRF7306HEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-ResistanceS1 D1VDSS = -30V Dual P-Channel Mosfet 2 7G1 D1 Surface Mount3 6S2 D2 Available in Tape & Reel45RDS(on) = 0.10G2 D2 Dynamic dv/dt Rating Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techni

8.25. irf7304.pdf Size:112K _international_rectifier

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PD - 9.1240CIRF7304HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance1 8S1 D1 Dual P-Channel MosfetVDSS = -20V2 7G1 D1 Surface Mount3 6 Available in Tape & ReelS2 D2 Dynamic dv/dt Rating4 5G2 D2RDS(on) = 0.090 Fast SwitchingT op V iewDescriptionFifth Generation HEXFETs from International Rectifier utilize advanced processingtec

8.26. irf7309pbf-1.pdf Size:300K _international_rectifier

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IRF7309TRPbF-1HEXFET Power MOSFETN-CH P-CH VVDS 30 -30 VRDS(on) max 0.05 0.10 (@V = 10V)GSQg (max) 25 25 nCID SO-84.0 -3.0 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Ind

8.27. irf7306qpbf.pdf Size:249K _international_rectifier

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PD - 96105IRF7306QPbFHEXFET Power MOSFETl Advanced Process Technology1 8l Ultra Low On-ResistanceS1 D1VDSS = -30Vl Dual P Channel MOSFET2 7G1 D1l Surface Mount3 6S2 D2l Available in Tape & Reel4l 150C Operating Temperature 5G2 D2 RDS(on) = 0.10l Automotive [Q101] Qualifiedl Lead-FreeTop ViewDescriptionSpecifically designed for Automotive applic

8.28. irf730a.pdf Size:927K _samsung

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Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 1.0 Rugged Gate Oxide Technology Lower Input CapacitanceID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Lower RDS(ON) : 0.765 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic

8.29. irfp330-333 irf730-733.pdf Size:329K _samsung

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8.30. irf730alpbf irf730aspbf sihf730al sihf730as.pdf Size:199K _vishay

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IRF730AS, SiHF730AS, IRF730AL, SiHF730ALVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400DefinitionRDS(on) (Max.) ()VGS = 10 V 1.0 Low Gate Charge Qg Results in Simple DriveRequirementQg (Max.) (nC) 22 Improved Gate, Avalanche and Dynamic dV/dtQgs (nC) 5.8RuggednessQgd (nC) 9.3 Fully Characteriz

8.31. irf730apbf sihf730a.pdf Size:206K _vishay

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IRF730A, SiHF730AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg results in Simple DriveVDS (V) 400AvailableRequirementRDS(on) ()VGS = 10 V 1.0RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 22 RuggednessQgs (nC) 5.8 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 9.3 Effecti

8.32. irf730spbf sihf730s.pdf Size:191K _vishay

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IRF730S, SiHF730SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400Definition Surface MountRDS(on) ()VGS = 10 V 1.0 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 5.7 Repetitive Avalanche RatedQgd (nC) 22 Fast Switching Ease of ParallelingConfiguration Sing

8.33. irf730s sihf730s.pdf Size:165K _vishay

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IRF730S, SiHF730SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 400Definition Surface MountRDS(on) ()VGS = 10 V 1.0 Available in Tape and Reel Qg (Max.) (nC) 38 Dynamic dV/dt RatingQgs (nC) 5.7 Repetitive Avalanche RatedQgd (nC) 22 Fast Switching Ease of ParallelingConfiguration Sing

8.34. irf730 sihf730.pdf Size:196K _vishay

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IRF730, SiHF730Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.0RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 5.7Qgd (nC) 22 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES

8.35. irf730b.pdf Size:213K _vishay

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IRF730Bwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 450- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 1.0- Low Input Capacitance (Ciss)Qg max. (nC) 18- Reduced Capacitive Switching LossesQgs (nC) 3 - High Body Diode Ruggedness- Avalanche Energy Rated (UIS)Qgd (nC) 4 Opt

8.36. irf730a sihf730a.pdf Size:206K _vishay

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IRF730A, SiHF730AVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg results in Simple DriveVDS (V) 400AvailableRequirementRDS(on) ()VGS = 10 V 1.0RoHS* Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANTQg (Max.) (nC) 22 RuggednessQgs (nC) 5.8 Fully Characterized Capacitance and Avalanche Voltageand CurrentQgd (nC) 9.3 Effecti

8.37. auirf7309q.pdf Size:456K _infineon

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AUTOMOTIVE GRADE AUIRF7309Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8S1 D1 Low On-Resistance 2 7VDSS 30V -30V G1 D1 Logic Level Gate Drive 3 6S2 D2 Dual N and P Channel MOSFET RDS(on) max. 0.05 0.1045G2 D2 Dynamic dv/dt Rating P-CHANNEL MOSFET 150C Operating Temperature Top ViewID 4.7A -3.5A

8.38. irf7307pbf.pdf Size:282K _infineon

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PD - 95179IRF7307PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-ResistanceN-CHANNEL MOSFET1 8l Dual N and P Channel MosfetS1 D1N-Ch P-Chl Surface Mount 2 7G1 D1l Available in Tape & Reel3 6S2 D2VDSS 20V -20Vl Dynamic dv/dt Rating4 5G2 D2l Fast SwitchingP-CHANNEL MOSFETl Lead-FreeTop View RDS(on) 0.050 0.090DescriptionFifth G

8.39. irf730 sihf730.pdf Size:146K _infineon

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IRF730, SiHF730Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 400Available Repetitive Avalanche RatedRDS(on) ()VGS = 10 V 1.0RoHS* Fast SwitchingQg (Max.) (nC) 38COMPLIANT Ease of ParallelingQgs (nC) 5.7Qgd (nC) 22 Simple Drive RequirementsConfiguration Single Compliant to RoHS Directive 2002/95/ECDDES

8.40. irf7309trpbf-1.pdf Size:300K _infineon

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IRF7309TRPbF-1HEXFET Power MOSFETN-CH P-CH VVDS 30 -30 VRDS(on) max 0.05 0.10 (@V = 10V)GSQg (max) 25 25 nCID SO-84.0 -3.0 A(@T = 25C)AFeatures BenefitsIndustry-standard pinout SO-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount Techniques Easier ManufacturingRoHS Compliant, Halogen-Free Environmentally FriendlierMSL1, Ind

8.41. irf7304pbf.pdf Size:231K _infineon

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PD - 95038IRF7304PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance1 8S1 D1l Dual P-Channel MosfetVDSS = -20V2 7G1 D1l Surface Mount3 6l Available in Tape & ReelS2 D2l Dynamic dv/dt Rating45G2 D2RDS(on) = 0.090l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifier utilize adva

8.42. irf7306pbf.pdf Size:231K _infineon

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PD - 95178IRF7306PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel Dual P-Channel Mosfet 1 8S1 D1VDSS = -30Vl Surface Mount2 7G1 D1l Available in Tape & Reel3 6S2 D2l Dynamic dv/dt Rating4 5l Fast SwitchingG2 D2 RDS(on) = 0.10l Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advance

8.43. irf7303pbf.pdf Size:230K _infineon

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PD - 95177IRF7303PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistance1 8l Dual N-Channel MosfetS1 D1VDSS = 30Vl Surface Mount 2 7G1 D1l Available in Tape & Reel3 6S2 D2l Dynamic dv/dt Rating4 5G2 D2RDS(on) = 0.050l Fast Switchingl Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanc

8.44. hirf730.pdf Size:46K _hsmc

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Spec. No. : MOS200406HI-SINCERITYIssued Date : 2004.10.01Revised Date : 2005.04.22MICROELECTRONICS CORP.Page No. : 1/4HIRF730 Series Pin AssignmentHIRF730 / HIRF730FTabN-CHANNEL POWER MOSFET3-Lead Plastic TO-220ABPackage Code: EPin 1: GatePin 2 & Tab: DrainDescriptionPin 3: SourceThird Generation HEXFETs from international Rectifier provide thedesigner with the

8.45. irf730.pdf Size:94K _ape

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IRF730RoHS-compliant ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 400V Fast Switching Characteristic RDS(ON) 1 Simple Drive Requirement ID 5.5AGSDescriptionGTO-220(P)DAPEC MOSFET provide the power designer with the best combination of fastSswitching , lower on-resistance and reasonable cost.

8.46. irf730s.pdf Size:1398K _kexin

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SMD Type MOSFETN-Channel MOSFETIRF730S (KRF730S) Features VDS (V) =400V ID = 5.5 A (VGS = 10V) RDS(ON) 1 (VGS = 10V) Fast switching Low thermal resistancedgs Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 400V Gate-Source Voltage VGS 20 Tc = 25 5.5 Continuous Drain Current ID Tc

8.47. irf730fi.pdf Size:232K _inchange_semiconductor

IRF7301PBF
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isc N-Channel MOSFET Transistor IRF730FIDESCRIPTIONDrain Current I =3.5A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 1.0(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned especially for high voltage,high speed applications,

8.48. irf730a.pdf Size:234K _inchange_semiconductor

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INCHANGE Semiconductorisc N-Channel Mosfet Transistor IRF730AFEATURESDrain Current I =5.5A@ T =25D CDrain Source Voltage-: V = 400V(Min)DSSFast Switching SpeedLow Drive RequirementMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitch Mode Power SupplyUninterruptable Power SupplyHigh speed power swi

8.49. irf730.pdf Size:114K _inchange_semiconductor

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MOSFET INCHANGE IRF730 N-channel mosfet transistor Features With TO-220 package 1 2 3 Simple drive requirements Fast switching VDSS=400V; RDS(ON)1.0;ID=5.5A 1.gate 2.drain 3.source Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVDSS Drain-source voltage (VGS=0) 400 VVGS Gate-source voltage 20 V ID Drain Current-continuous@ TC=25 5

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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