ME12N04-G Todos los transistores

 ..1. Size:1209K  matsuki electric
 me12n04 me12n04-g.pdf

ME12N04/ME12N04-G N- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME12N04 is the N-Channel logic enhancement mode power RDS(ON)=28m @VGS=10V (N-Ch) field effect transistors are produced using high cell density, DMOS RDS(ON)=52m @VGS=4.5V (N-Ch) trench technology. This high density process is especially tailored to Super high density cell design for extrem

 7.1. Size:1537K  cn vbsemi
 me12n04.pdf

ME12N04 www.VBsemi.tw N-Channel 4 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.013 at VGS = 10 V 55 40 42 nC 0.018 at VGS = 4.5 V 45 APPLICATIONS D OR-ing TO-252 Server DC/DC G D G S S Top View N-Channel MOSFET ABSO

 9.1. Size:1081K  matsuki electric
 me12n15 me12n15-g.pdf

ME12N15 / ME12N15-G N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 150m @VGS=10V The ME12N15 is the N-Channel logic enhancement mode power RDS(ON) 250m @VGS=10V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially