ME12N15 Todos los transistores

 

ME12N15 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ME12N15
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 44.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6.2 nS
   Cossⓘ - Capacitancia de salida: 78 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: TO252
 

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ME12N15 Datasheet (PDF)

 ..1. Size:1081K  matsuki electric
 me12n15 me12n15-g.pdf pdf_icon

ME12N15

ME12N15 / ME12N15-G N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON)150m@VGS=10V The ME12N15 is the N-Channel logic enhancement mode power RDS(ON)250m@VGS=10V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially

 9.1. Size:1209K  matsuki electric
 me12n04 me12n04-g.pdf pdf_icon

ME12N15

ME12N04/ME12N04-G N- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME12N04 is the N-Channel logic enhancement mode power RDS(ON)=28m@VGS=10V (N-Ch) field effect transistors are produced using high cell density, DMOS RDS(ON)=52m@VGS=4.5V (N-Ch) trench technology. This high density process is especially tailored to Super high density cell design for extrem

 9.2. Size:1537K  cn vbsemi
 me12n04.pdf pdf_icon

ME12N15

ME12N04www.VBsemi.twN-Channel 4 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.013 at VGS = 10 V 5540 42 nC0.018 at VGS = 4.5 V 45APPLICATIONSD OR-ingTO-252 Server DC/DCGDG SSTop ViewN-Channel MOSFETABSO

Otros transistores... ME10N15 , ME10N15-G , ME110N10T , ME110N10F , ME120N10T , ME120N10T-G , ME12N04 , ME12N04-G , 13N50 , ME12N15-G , ME12P04 , ME12P04-G , ME15N10-G , ME20N03 , ME20N03-G , ME20N15 , ME20N15-G .

 

 
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