ME20N03 Todos los transistores

 

ME20N03 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ME20N03
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 39 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 178 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: TO252
 

 Búsqueda de reemplazo de ME20N03 MOSFET

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ME20N03 datasheet

 ..1. Size:1086K  matsuki electric
 me20n03 me20n03-g.pdf pdf_icon

ME20N03

ME20N03/ ME20N03-G N-Channel 30V Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME20N03 is the N-Channel logic enhancement mode power RDS(ON) 15m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 20m @VGS=4.5V trench technology. This high density process is especially tailored to Super high density cell design for extremel

 ..2. Size:842K  cn vbsemi
 me20n03.pdf pdf_icon

ME20N03

ME20N03 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSOLU

 9.1. Size:1097K  matsuki electric
 me20n15 me20n15-g.pdf pdf_icon

ME20N03

ME20N15 / ME20N15-G N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 90m @VGS=10V The ME20N15 is the N-Channel logic enhancement mode power RDS(ON) 110m @VGS=7V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially t

 9.2. Size:1167K  matsuki electric
 me20n10 me20n10-g.pdf pdf_icon

ME20N03

ME20N10/ME20N10-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME20N10 is the N-Channel logic enhancement mode power RDS(ON) 78m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 98m @VGS=5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)

MOSTRAR MÁS

Otros transistores... ME120N10T-G , ME12N04 , ME12N04-G , ME12N15 , ME12N15-G , ME12P04 , ME12P04-G , ME15N10-G , 20N50 , ME20N03-G , ME20N15 , ME20N15-G , ME20P03 , ME20P03-G , ME20P06 , ME20P06-G , ME2301 .

 

 

 


 
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