ME20N15 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

ME20N15 datasheet

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me20n15 me20n15-g.pdf pdf_icon

ME20N15 / ME20N15-G N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 90m @VGS=10V The ME20N15 is the N-Channel logic enhancement mode power RDS(ON) 110m @VGS=7V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially t

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me20n15f.pdf pdf_icon

ME20N15F N- Channel 150V (D-S) MOSFET GENERAL DESCRIPTION FEATURES RDS(ON) 90m @VGS=10V The ME20N15F is the N-Channel logic enhancement mode power RDS(ON) 110m @VGS=7V field effect transistors are produced using high cell density, DMOS Super high density cell design for extremely low RDS(ON) trench technology. This high density process is especially tailored to

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me20n10 me20n10-g.pdf pdf_icon

ME20N10/ME20N10-G N- Channel 100V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME20N10 is the N-Channel logic enhancement mode power RDS(ON) 78m @VGS=10V field effect transistors are produced using high cell density, DMOS RDS(ON) 98m @VGS=5V trench technology. This high density process is especially tailored to Super high density cell design for extremely low RDS(ON)

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me20n10.pdf pdf_icon

ME20N10 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (

Otros transistores... ME12N04-G , ME12N15 , ME12N15-G , ME12P04 , ME12P04-G , ME15N10-G , ME20N03 , ME20N03-G , IRF2807 , ME20N15-G , ME20P03 , ME20P03-G , ME20P06 , ME20P06-G , ME2301 , ME2301-G , IRF7303PBF .