IRF7306PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF7306PBF
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 17 nS
Cossⓘ - Capacitancia de salida: 200 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
Encapsulados: SO-8
Búsqueda de reemplazo de IRF7306PBF MOSFET
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IRF7306PBF datasheet
irf7306pbf.pdf
PD - 95178 IRF7306PbF HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet 1 8 S1 D1 VDSS = -30V l Surface Mount 2 7 G1 D1 l Available in Tape & Reel 3 6 S2 D2 l Dynamic dv/dt Rating 4 5 l Fast Switching G2 D2 RDS(on) = 0.10 l Lead-Free Top View Description Fifth Generation HEXFETs from International Rectifier utilize advance
irf7306qpbf.pdf
PD - 96105 IRF7306QPbF HEXFET Power MOSFET l Advanced Process Technology 1 8 l Ultra Low On-Resistance S1 D1 VDSS = -30V l Dual P Channel MOSFET 2 7 G1 D1 l Surface Mount 3 6 S2 D2 l Available in Tape & Reel 4 l 150 C Operating Temperature 5 G2 D2 RDS(on) = 0.10 l Automotive [Q101] Qualified l Lead-Free Top View Description Specifically designed for Automotive applic
irf7306.pdf
PD - 9.1241C IRF7306 HEXFET Power MOSFET Generation V Technology 1 8 Ultra Low On-Resistance S1 D1 VDSS = -30V Dual P-Channel Mosfet 2 7 G1 D1 Surface Mount 3 6 S2 D2 Available in Tape & Reel 4 5 RDS(on) = 0.10 G2 D2 Dynamic dv/dt Rating Fast Switching Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techni
irf7306qtr.pdf
IRF7306QTR www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.029 at VGS = - 10 V - 7.3 100 % UIS Tested RoHS - 30 17 nC COMPLIANT 0.039 at VGS = - 4.5 V - 6.3 APPLICATIONS Load Switches S1 S2 SO-8 S1 1 D1 8 G1 G2 G1 2 D1 7 S2 3 D2 6 G2 4 D2 5 Top V
Otros transistores... ME20P03 , ME20P03-G , ME20P06 , ME20P06-G , ME2301 , ME2301-G , IRF7303PBF , IRF7304PBF , IRF1405 , IRF7307PBF , IRF7309TRPBF-1 , IRF7311PBF , IRF7313PBF , IRF7314PBF , IRF7316PBF , IRF7317PBF , IRF7319PBF .
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