IRF7306PBF Todos los transistores

 

IRF7306PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF7306PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.1 Ohm
   Paquete / Cubierta: SO-8
 

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IRF7306PBF Datasheet (PDF)

 ..1. Size:231K  international rectifier
 irf7306pbf.pdf pdf_icon

IRF7306PBF

PD - 95178IRF7306PbFHEXFET Power MOSFETl Generation V Technologyl Ultra Low On-Resistancel Dual P-Channel Mosfet 1 8S1 D1VDSS = -30Vl Surface Mount2 7G1 D1l Available in Tape & Reel3 6S2 D2l Dynamic dv/dt Rating4 5l Fast SwitchingG2 D2 RDS(on) = 0.10l Lead-FreeTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advance

 7.1. Size:249K  international rectifier
 irf7306qpbf.pdf pdf_icon

IRF7306PBF

PD - 96105IRF7306QPbFHEXFET Power MOSFETl Advanced Process Technology1 8l Ultra Low On-ResistanceS1 D1VDSS = -30Vl Dual P Channel MOSFET2 7G1 D1l Surface Mount3 6S2 D2l Available in Tape & Reel4l 150C Operating Temperature 5G2 D2 RDS(on) = 0.10l Automotive [Q101] Qualifiedl Lead-FreeTop ViewDescriptionSpecifically designed for Automotive applic

 7.2. Size:113K  international rectifier
 irf7306.pdf pdf_icon

IRF7306PBF

PD - 9.1241CIRF7306HEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-ResistanceS1 D1VDSS = -30V Dual P-Channel Mosfet 2 7G1 D1 Surface Mount3 6S2 D2 Available in Tape & Reel45RDS(on) = 0.10G2 D2 Dynamic dv/dt Rating Fast SwitchingTop ViewDescriptionFifth Generation HEXFETs from International Rectifierutilize advanced processing techni

 7.3. Size:1689K  cn vbsemi
 irf7306qtr.pdf pdf_icon

IRF7306PBF

IRF7306QTRwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.029 at VGS = - 10 V - 7.3 100 % UIS TestedRoHS- 30 17 nCCOMPLIANT0.039 at VGS = - 4.5 V - 6.3APPLICATIONS Load SwitchesS1 S2SO-8S1 1 D18G1 G2G1 2 D17S2 3 D26G2 4 D25Top V

MOSTRAR MÁS

Otros transistores... ME20P03 , ME20P03-G , ME20P06 , ME20P06-G , ME2301 , ME2301-G , IRF7303PBF , IRF7304PBF , NCEP15T14 , IRF7307PBF , IRF7309TRPBF-1 , IRF7311PBF , IRF7313PBF , IRF7314PBF , IRF7316PBF , IRF7317PBF , IRF7319PBF .

History: SNN2515D | IRF7314

 

 
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