IRF7309TRPBF-1 Todos los transistores

 ..1. Size:300K  international rectifier
 irf7309trpbf-1.pdf

IRF7309TRPbF-1 HEXFET Power MOSFET N-CH P-CH V VDS 30 -30 V RDS(on) max 0.05 0.10 (@V = 10V) GS Qg (max) 25 25 nC ID SO-8 4.0 -3.0 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Ind

 2.1. Size:1289K  cn vbsemi
 irf7309trpbf.pdf

IRF7309TRPBF www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at

 7.1. Size:456K  1
 auirf7309q.pdf

AUTOMOTIVE GRADE AUIRF7309Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8 S1 D1 Low On-Resistance 2 7 VDSS 30V -30V G1 D1 Logic Level Gate Drive 3 6 S2 D2 Dual N and P Channel MOSFET RDS(on) max. 0.05 0.10 4 5 G2 D2 Dynamic dv/dt Rating P-CHANNEL MOSFET 150 C Operating Temperature Top View ID 4.7A -3.5A

 7.2. Size:1962K  international rectifier
 irf7309qpbf.pdf

PD - 96135A IRF7309QPbF HEXFET Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance N-CHANNEL MOSFET 1 8 N-Ch P-Ch l Dual N and P Channel MOSFET S1 D1 l Surface Mount 2 7 G1 D1 l Available in Tape & Reel VDSS 30V -30V 3 6 l 150 C Operating Temperature S2 D2 l Lead-Free 4 5 RDS(on) 0.050 0.10 G2 D2 P-CHANNEL MOSFET Description Top View These HEXF

 7.3. Size:162K  international rectifier
 irf7309.pdf

PD - 9.1243B IRF7309 PRELIMINARY HEXFET Power MOSFET Generation V Technology N-CHANNEL MOSFET Ultra Low On-Resistance 1 8 N-Ch P-Ch S1 D1 Dual N and P Channel Mosfet 2 7 G1 D1 Surface Mount VDSS 30V -30V Available in Tape & Reel 3 6 S2 D2 Dynamic dv/dt Rating 4 5 G2 D2 Fast Switching P-CHANNEL MOSFET RDS(on) 0.050 0.10 Top View Description Fifth Generation HEXFET

 7.4. Size:300K  international rectifier
 irf7309pbf-1.pdf

IRF7309TRPbF-1 HEXFET Power MOSFET N-CH P-CH V VDS 30 -30 V RDS(on) max 0.05 0.10 (@V = 10V) GS Qg (max) 25 25 nC ID SO-8 4.0 -3.0 A (@T = 25 C) A Features Benefits Industry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques Easier Manufacturing RoHS Compliant, Halogen-Free Environmentally Friendlier MSL1, Ind

 7.5. Size:1799K  international rectifier
 irf7309ipbf.pdf

PD - 96086 IRF7309IPbF Lead-Free Description www.irf.com 1 07/07/06 IRF7309IPbF 2 www.irf.com IRF7309IPbF www.irf.com 3 IRF7309IPbF 4 www.irf.com IRF7309IPbF www.irf.com 5 IRF7309IPbF 6 www.irf.com IRF7309IPbF www.irf.com 7 IRF7309IPbF 8 www.irf.com IRF7309IPbF Peak Diode Recovery dv/dt Test Circuit + Circuit Layout Considerations Low Stray Inductance

 7.6. Size:456K  infineon
 auirf7309q.pdf

AUTOMOTIVE GRADE AUIRF7309Q Features N-CHANNEL MOSFET N-CH P-CH Advanced Planar Technology 1 8 S1 D1 Low On-Resistance 2 7 VDSS 30V -30V G1 D1 Logic Level Gate Drive 3 6 S2 D2 Dual N and P Channel MOSFET RDS(on) max. 0.05 0.10 4 5 G2 D2 Dynamic dv/dt Rating P-CHANNEL MOSFET 150 C Operating Temperature Top View ID 4.7A -3.5A