IRF7480MTRPBF Todos los transistores

 

IRF7480MTRPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRF7480MTRPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 96 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 217 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 1035 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0012 Ohm
   Paquete / Cubierta: DIRECTFET
     - Selección de transistores por parámetros

 

IRF7480MTRPBF Datasheet (PDF)

 ..1. Size:498K  infineon
irf7480mtrpbf.pdf pdf_icon

IRF7480MTRPBF

StrongIRFET IRF7480MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 0.95m Half-bridge and full-bridge topologies max 1.20m Synchronous rectifier applications Resonant mode power supplies ID (Silic

 6.1. Size:498K  international rectifier
irf7480m.pdf pdf_icon

IRF7480MTRPBF

StrongIRFET IRF7480MTRPbF DirectFET N-Channel Power MOSFET Application Brushed Motor drive applications VDSS 40V BLDC Motor drive applications RDS(on) typ. Battery powered circuits 0.95m Half-bridge and full-bridge topologies max 1.20m Synchronous rectifier applications Resonant mode power supplies ID (Silic

 8.1. Size:231K  international rectifier
irf7484pbf.pdf pdf_icon

IRF7480MTRPBF

PD - 95281AIRF7484PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveVDSS RDS(on) max (mW) ID 40V 10@VGS = 7.0V 14ABenefitsl Advanced Process Technologyl Ultra Low On-Resistancel Fast Switchingl Repetitive Avalanche Allowed up to Tjmax.AA1 8l Lead-FreeS D2 7S DDescription3 6S DThis Stripe Planar design of HEXFET Power45MOSFETs

 8.2. Size:141K  international rectifier
irf7488.pdf pdf_icon

IRF7480MTRPBF

PD - 94507IRF7488HEXFET Power MOSFETApplicationsl High frequency DC-DC converters VDSS RDS(on) max Qg80V 29mW@VGS=10V 38nCBenefitsl Low Gate-to-Drain Charge to ReduceAASwitching Losses1 8S Dl Fully Characterized Capacitance Including2 7S DEffective COSS to Simplify Design, (See3 6S DApp. Note AN1001)4 5l Fully Characterized Avalanche VoltageG Dand

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History: AONS36316 | RQK0608BQDQS | 4N65KG-T60-K | MRF5003 | CSD17309Q3 | IRFR120TR

 

 
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