IRF7506PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF7506PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1(min) V
   Qgⓘ - Carga de la puerta: 7.5 nC
   trⓘ - Tiempo de subida: 12 nS
   Cossⓘ - Capacitancia de salida: 87 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm
   Paquete / Cubierta: MICRO8

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IRF7506PBF Datasheet (PDF)

..1. Size:210K infineon
irf7506pbf.pdf

PD - 95696IRF7506PbF Lead-Freewww.irf.com9/2/04IRF7506PbF2 www.irf.comIRF7506PbFwww.irf.com 3IRF7506PbF4 www.irf.comIRF7506PbFwww.irf.com 5IRF7506PbF6 www.irf.comIRF7506PbFMicro8 Package OutlineLEAD ASSIGNMENTSINCHES MILLIMETERSDIMD MIN MAX MIN MAX3- B -D D D D D1 D1 D2 D2A .036 .044 0.91 1.11A1 .004 .008 0.10 0.208 7 6 5 8 7 6 5 B

7.1. Size:103K international rectifier
irf7506.pdf

PD - 9.1268FIRF7506HEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-ResistanceS1 D1VDSS = -30V Dual P-Channel MOSFET2 7G1 D1 Very Small SOIC Package3 6S2 D2 Low Profile (

8.1. Size:217K international rectifier
irf7509.pdf

PD - 91270JIRF7509HEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFET1 8 Ultra Low On-Resistance S1 D1N-Ch P-Ch Dual N and P Channel MOSFET2 7G1 D1 Very Small SOIC Package3 6 VDSS 30V -30VS2 D2 Low Profile (

8.2. Size:115K international rectifier
irf7504.pdf

PD - 9.1267GIRF7504HEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-ResistanceS1 D1 Dual P-Channel MOSFETVDSS = -20V2 7G1 D1 Very Small SOIC Package3 6S2 D2 Low Profile (

8.3. Size:216K international rectifier
irf7507.pdf

PD - 91269IIRF7507HEXFET Power MOSFET Generation V TechnologyN-CHANNEL MOSFET1 8 Ultra Low On-Resistance S1 D1N-Ch P-Ch Dual N and P Channel MOSFET2 7G1 D1 Very Small SOIC Package3 6 VDSS 20V -20VS2 D2 Low Profile (

8.4. Size:143K international rectifier
irf7501.pdf

PD - 91265HIRF7501PRELIMINARYHEXFET Power MOSFET Generation V Technology1 8S1 D1 Ulrtra Low On-ResistanceVDSS =20V2 7 Dual N-Channel MOSFETG1 D1 Very Small SOIC Package3 6S2 D2 Low Profile (

8.5. Size:114K international rectifier
irf7503.pdf

PD - 9.1266GIRF7503HEXFET Power MOSFET Generation V Technology1 8 Ultra Low On-ResistanceS1 D1 Dual N-Channel MOSFETVDSS = 30V2 7G1 D1 Very Small SOIC Package3 6S2 Low Profile (

8.6. Size:237K international rectifier
irf7509pbf-1.pdf

IRF7509PbF-1HEXFET Power MOSFETN-CH P-CHN-CHANNEL MOSFET1 8VDS 30 -30 V S1 D12 7RDS(on) max G1 D10.11 0.2 (@V = 10V)GS3 6S2 D2Qg (typical) 7.8 7.5 nC45G2 D2ID 2.7 -2.0 A P-CHANNEL MOSFET(@T = 25C)AMicro8Top ViewFeatures BenefitsIndustry-standard pinout Micro-8 Package Multi-Vendor CompatibilityCompatible with Existing Surface Mount

8.7. Size:942K samsung
irf750a.pdf

Advanced Power MOSFETFEATURESBVDSS = 400 V Avalanche Rugged TechnologyRDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input CapacitanceID = 15 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 400V Low RDS(ON) : 0.254 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Value

8.8. Size:213K infineon
irf7507pbf.pdf

PD - 95218IRF7507PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFET1 8l Ultra Low On-Resistance S1 D1N-Ch P-Chl Dual N and P Channel MOSFET 2 7G1 D1l Very Small SOIC Package3 6VDSS 20V -20VS2 D2l Low Profile (

8.9. Size:1008K infineon
irf7503pbf.pdf

PD- 95346IRF7503PbF Lead-Freewww.irf.com 102/22/05IRF7503PbF2 www.irf.comIRF7503PbFwww.irf.com 3IRF7503PbF4 www.irf.comIRF7503PbFwww.irf.com 5IRF7503PbF6 www.irf.comIRF7503PbFMicro8 Package OutlineDimensions are shown in milimeters (inches)LEAD ASSIGNMENTS INCHES MILLIMETERSD DIM MIN MAX MIN MAX3- B -D D D D D1 D1 D2 D2A .036 .044 0.91

8.10. Size:241K infineon
irf7509pbf.pdf

PD - 95397IRF7509PbFHEXFET Power MOSFETl Generation V TechnologyN-CHANNEL MOSFET1 8l Ultra Low On-Resistance S1 D1N-Ch P-Chl Dual N and P Channel MOSFET2 7G1 D1l Very Small SOIC Package3 6 VDSS 30V -30VS2 D2l Low Profile (

8.11. Size:1079K infineon
irf7504pbf.pdf

PD- 95912IRF7504PbF Lead-Freewww.irf.com 12/22/05IRF7504PbF2 www.irf.comIRF7504PbFwww.irf.com 3IRF7504PbF4 www.irf.comIRF7504PbFwww.irf.com 5IRF7504PbF6 www.irf.comIRF7504PbFMicro8 Package OutlineDimensions are shown in milimeters (inches)LEAD ASSIGNMENTS INCHES MILLIMETERSDIMD MIN MAX MIN MAX3- B -D D D D D1 D1 D2 D2A .036 .044 0.91

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