IRF7946TRPBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF7946TRPBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 96 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 198 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 49 nS
Cossⓘ - Capacitancia de salida: 1046 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0014 Ohm
Encapsulados: DIRECTFET
Búsqueda de reemplazo de IRF7946TRPBF MOSFET
- Selecciónⓘ de transistores por parámetros
IRF7946TRPBF datasheet
..1. Size:289K international rectifier
irf7946trpbf.pdf 
StrongIRFET IRF7946PbF Applications DirectFET Power MOSFET l Brushed Motor drive applications VDSS 40V l BLDC Motor drive applications RDS(on) typ. 1.1m l Battery powered circuits max. 1.4m l Half-bridge and full-bridge topologies ID (Silicon Limited) 198A l Synchronous rectifier applications l Resonant mode power supplies ID (Package Limited) 90A l OR-ing and redund
7.1. Size:289K international rectifier
irf7946.pdf 
StrongIRFET IRF7946PbF Applications DirectFET Power MOSFET l Brushed Motor drive applications VDSS 40V l BLDC Motor drive applications RDS(on) typ. 1.1m l Battery powered circuits max. 1.4m l Half-bridge and full-bridge topologies ID (Silicon Limited) 198A l Synchronous rectifier applications l Resonant mode power supplies ID (Package Limited) 90A l OR-ing and redund
9.1. Size:122K 1
irf7910.pdf 
PD - 94419 IRF7910 HEXFET Power MOSFET VDSS RDS(on) max ID Applications 12V 15m @VGS = 4.5V 10A l High Frequency 3.3V and 5V input Point- of-Load Synchronous Buck Converters for Netcom and Computing Applications l Power Management for Netcom, Computing and Portable Applications 1 8 S1 D1 2 7 G1 D1 Benefits 3 6 l Ultra-Low Gate Impedance S2 D2 l Very Low RDS(on) 4 5
9.2. Size:320K international rectifier
irf7907pbf.pdf 
PD - 97066A IRF7907PbF HEXFET Power MOSFET Applications VDSS ID RDS(on) max l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, 30V Q1 16.4m @VGS = 10V 9.1A Graphics Cards, Game Consoles and Set-Top Box Q2 11.8m @VGS = 10V 11A Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rat
9.3. Size:323K international rectifier
irf7905pbf.pdf 
PD - 97065B IRF7905PbF HEXFET Power MOSFET Applications VDSS ID RDS(on) max l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, 30V Q1 21.8m @VGS = 10V 7.8A Graphics Cards, Game Consoles and Set-Top Box Q2 17.1m @VGS = 10V 8.9A Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Ra
9.4. Size:307K international rectifier
irf7904pbf-1.pdf 
IRF7904PbF-1 HEXFET Power MOSFET VDS 30 V RDS(on) max Q1 16.2 G1 1 8 D1 (@V = 10V) GS m RDS(on) max Q2 S2 2 7 S1 / D2 10.8 (@V = 10V) GS S2 3 6 S1 / D2 Qg (typical) Q1 7.5 nC Q Q2 14 g (typical) G2 4 5 S1 / D2 ID Q1 7.6 (@TA = 25 C) SO-8 A ID Q2 11 (@TA = 25 C) Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards,
9.5. Size:255K international rectifier
irf7904pbf.pdf 
PD - 96919B IRF7904PbF HEXFET Power MOSFET Applications VDSS ID RDS(on) max l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, 30V Q1 16.2m @VGS = 10V 7.6A Graphics Cards, Game Consoles and Set-Top Box Q2 10.8m @VGS = 10V 11A Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate Rat
9.6. Size:256K international rectifier
irf7901d1.pdf 
PD- 93844B IRF7901D1 Co-Pack Dual N-channel HEXFET Power MOSFET Dual FETKY and Schottky Diode Ideal for Synchronous Buck DC-DC Co-Packaged Dual MOSFET Plus Schottky Diode Converters Up to 5A Peak Output Low Conduction Losses Device Ratings (Max.Values) Low Switching Losses Low Vf Schottky Rectifier Q1 Q2 and Schottky Q1 Pwr 18 Source Vin VDS 30V 30V
9.7. Size:261K international rectifier
irf7902pbf.pdf 
PD - 97194A IRF7902PbF HEXFET Power MOSFET Applications VDSS ID RDS(on) max l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, 22.6m @VGS = 10V 30V Q1 6.4A Graphics Cards, Game Consoles 14.4m @VGS = 10V Q2 9.7A and Set-Top Box Benefits l Very Low RDS(on) at 4.5V VGS l Low Gate Charge l Fully Characterized Avalanche Voltage and Current l 20V VGS Max. Gate
9.8. Size:276K international rectifier
irf7907pbf-1.pdf 
IRF7907TRPbF-1 HEXFET Power MOSFET V 30 V DS R Q1 DS(on) m ax S2 1 8 D2 16.4 (@V = 10V) GS m R Q2 DS(on) m ax G2 2 7 D2 11.8 (@V = 10V) GS S1 3 6 D1 Q Q1 6.7 g (typical) nC Q Q2 14 g (typical) G1 4 5 D1 I Q1 9.1 D(@TA = 25 C) SO-8 A I Q2 11 D(@TA = 25 C) Applications l Dual SO-8 MOSFET for POL Converters in Notebook Computers, Servers, Graphics Cards,
9.9. Size:195K international rectifier
irf7910pbf-1.pdf 
IRF7910PbF-1 HEXFET Power MOSFET VDS 12 V 1 8 S1 D1 RDS(on) max 15 m 2 7 (@V = 4.5V) G1 D1 GS Qg (typical) 17 nC 3 6 S2 D2 ID 4 5 10 A G2 D2 (@T = 25 C) A SO-8 Top View Applications l High Frequency 3.3V and 5V input Point of-Load Synchronous Buck Converters for Netcom and Computing Applications l Power Management for Netcom, Computing and Portable Applications Fe
9.10. Size:2423K cn vbsemi
irf7905tr.pdf 
IRF7905TR www.VBsemi.tw Dual N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested 0.016 at VGS = 10 V 8.5 100 % UIS Tested 30 7.1 Compliant to RoHS Directive 2002/95/EC 0.020 at VGS = 4.5 V 7.6 APPLICATIONS Notebook System Power Low Current DC/DC D 1 D 2 SO-8 S
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