IRF8010LPBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRF8010LPBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 260 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 81 nC
   trⓘ - Tiempo de subida: 130 nS
   Cossⓘ - Capacitancia de salida: 480 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: TO-262

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IRF8010LPBF Datasheet (PDF)

..1. Size:224K international rectifier
irf8010lpbf irf8010spbf.pdf

PD - 95433IRF8010SPbFSMPS MOSFETIRF8010LPbFApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersl UPS and Motor ControlVDSS RDS(on) max IDl Lead-Free100V 15m 80ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-262D2Pakl Fully C

..2. Size:224K infineon
irf8010spbf irf8010lpbf.pdf

6.1. Size:256K inchange semiconductor
irf8010l.pdf

Isc N-Channel MOSFET Transistor IRF8010LFEATURESWith To-262 packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100

7.1. Size:224K international rectifier
irf8010spbf.pdf

7.2. Size:494K international rectifier
irf8010.pdf

PD - 94497SMPS MOSFETIRF8010ApplicationsHEXFET Power MOSFET High frequency DC-DC converters UPS and Motor ControlVDSS RDS(on) max IDBenefits100V 15m 80A Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001) Fully Characterized Avalanche Voltageand Current Typica

7.3. Size:133K international rectifier
irf8010pbf.pdf

PD - 95505IRF8010PbFSMPS MOSFETApplicationsHEXFET Power MOSFETl High frequency DC-DC convertersl UPS and Motor ControlVDSS RDS(on) max IDl Lead-Free100V 15m 80ABenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)l Fully Characterized Avalanche Voltag

7.4. Size:133K infineon
irf8010pbf.pdf

7.5. Size:1397K cn vbsemi
irf8010sp.pdf

IRF8010SPwww.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Maximum Junction Temperature0.010 at VGS = 10 V100100 Compliant to RoHS Directive 2002/95/EC0.023 at VGS = 4.5 V85D TO-263G G D S Top ViewS N-Channel MOSFETABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n

7.6. Size:245K inchange semiconductor
irf8010.pdf

isc N-Channel MOSFET Transistor IRF8010IIRF8010FEATURESStatic drain-source on-resistance:RDS(on) 15mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

7.7. Size:258K inchange semiconductor
irf8010s.pdf

Isc N-Channel MOSFET Transistor IRF8010SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

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