IRFB4410PBF Todos los transistores

 

IRFB4410PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IRFB4410PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 88 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 80 nS
   Cossⓘ - Capacitancia de salida: 360 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: TO-220AB

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IRFB4410PBF Datasheet (PDF)

 ..1. Size:799K  infineon
irfb4410pbf irfs4410pbf irfsl4410pbf.pdf

IRFB4410PBF IRFB4410PBF

PD - 95707EIRFB4410PbFIRFS4410PbFIRFSL4410PbFApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS 100Vl High Speed Power SwitchingRDS(on) typ. 8.0ml Hard Switched and High Frequency CircuitsG max. 10mIDS 88ABenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized

 6.1. Size:330K  international rectifier
irfb4410zpbf irfs4410zpbf irfsl4410zpbf.pdf

IRFB4410PBF IRFB4410PBF

IRFB4410ZPbFIRFS4410ZPbFIRFSL4410ZPbFHEXFET Power MOSFETApplicationsDVDSSl High Efficiency Synchronous Rectification in SMPS 100Vl Uninterruptible Power SupplyRDS(on) typ.7.2ml High Speed Power SwitchingG max. 9.0ml Hard Switched and High Frequency CircuitsID (Silicon Limited)97ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessDl

 6.2. Size:802K  international rectifier
irfb4410.pdf

IRFB4410PBF IRFB4410PBF

PD - 96902CIRFB4410IRFS4410IRFSL4410ApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS100Vl High Speed Power SwitchingRDS(on) typ.8.0ml Hard Switched and High Frequency CircuitsG max. 10mBenefitsID96Al Improved Gate, Avalanche and Dynamic dV/dtSRuggednessl Fully Characterized Capacita

 6.3. Size:294K  international rectifier
irfb4410zgpbf.pdf

IRFB4410PBF IRFB4410PBF

PD - 96213IRFB4410ZGPbFHEXFET Power MOSFETDApplicationsVDSS100Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 7.2ml High Speed Power SwitchingG max. 9.0ml Hard Switched and High Frequency CircuitsID (Silicon Limited)97ASBenefitsDl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized C

 6.4. Size:278K  infineon
auirfb4410.pdf

IRFB4410PBF IRFB4410PBF

PD - 97598AUTOMOTIVE GRADEAUIRFB4410HEXFET Power MOSFETFeatures Advanced Process TechnologyDVDSS100V Ultra Low On-Resistance Dynamic dV/dT RatingRDS(on) typ.8.0m 175C Operating Temperature max. 10m Fast SwitchingG Repetitive Avalanche Allowed up toID (Silicon Limited)88ATjmax Lead-Free, RoHS CompliantID (Package Limited)

 6.5. Size:330K  infineon
irfb4410zpbf irfs4410zpbf irfsl4410zpbf.pdf

IRFB4410PBF IRFB4410PBF

IRFB4410ZPbFIRFS4410ZPbFIRFSL4410ZPbFHEXFET Power MOSFETApplicationsDVDSSl High Efficiency Synchronous Rectification in SMPS 100Vl Uninterruptible Power SupplyRDS(on) typ.7.2ml High Speed Power SwitchingG max. 9.0ml Hard Switched and High Frequency CircuitsID (Silicon Limited)97ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtDDRuggednessDl

 6.6. Size:802K  infineon
irfb4410 irfs4410 irfsl4410.pdf

IRFB4410PBF IRFB4410PBF

PD - 96902CIRFB4410IRFS4410IRFSL4410ApplicationsHEXFET Power MOSFETl High Efficiency Synchronous Rectification in SMPSl Uninterruptible Power Supply DVDSS100Vl High Speed Power SwitchingRDS(on) typ.8.0ml Hard Switched and High Frequency CircuitsG max. 10mBenefitsID96Al Improved Gate, Avalanche and Dynamic dV/dtSRuggednessl Fully Characterized Capacita

 6.7. Size:245K  inchange semiconductor
irfb4410zg.pdf

IRFB4410PBF IRFB4410PBF

isc N-Channel MOSFET Transistor IRFB4410ZGIIRFB4410ZGFEATURESStatic drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)

 6.8. Size:246K  inchange semiconductor
irfb4410.pdf

IRFB4410PBF IRFB4410PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4410IIRFB4410FEATURESStatic drain-source on-resistance:RDS(on) 10mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMU

 6.9. Size:251K  inchange semiconductor
irfb4410z.pdf

IRFB4410PBF IRFB4410PBF

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB4410ZIIRFB4410ZFEATURESStatic drain-source on-resistance:RDS(on) 9.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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