IRFB7430PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFB7430PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 375 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 409 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 105 nS
Cossⓘ - Capacitancia de salida: 2130 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0013 Ohm
Encapsulados: TO-220AB
Búsqueda de reemplazo de IRFB7430PBF MOSFET
- Selecciónⓘ de transistores por parámetros
IRFB7430PBF datasheet
irfb7430pbf.pdf
StrongIRFETTM IRFB7430PbF Applications l Brushed Motor drive applications HEXFET Power MOSFET l BLDC Motor drive applications D VDSS 40V l Battery powered circuits RDS(on) typ. 1.0m l Half-bridge and full-bridge topologies l Synchronous rectifier applications max. 1.3m G l Resonant mode power supplies ID (Silicon Limited) 409A l OR-ing and redundant power switches S ID (
irfb7430.pdf
StrongIRFETTM IRFB7430PbF Applications l Brushed Motor drive applications HEXFET Power MOSFET l BLDC Motor drive applications D VDSS 40V l Battery powered circuits RDS(on) typ. 1.0m l Half-bridge and full-bridge topologies l Synchronous rectifier applications max. 1.3m G l Resonant mode power supplies ID (Silicon Limited) 409A l OR-ing and redundant power switches S ID (
irfb7434.pdf
StrongIRFET IRFB7434PbF Applications HEXFET Power MOSFET l Brushed Motor drive applications VDSS 40V D l BLDC Motor drive applications RDS(on) typ. 1.25m l Battery powered circuits max. 1.6m l Half-bridge and full-bridge topologies G l Synchronous rectifier applications ID (Silicon Limited) 317A l Resonant mode power supplies S ID (Package Limited) 195A l OR-ing and
irfb7437.pdf
StrongIRFET IRFB7437PbF HEXFET Power MOSFET Applications l Brushed Motor drive applications VDSS D 40V l BLDC Motor drive applications RDS(on) typ. 1.5m l Battery powered circuits l Half-bridge and full-bridge topologies max. 2.0m G l Synchronous rectifier applications ID (Silicon Limited) 250A l Resonant mode power supplies S l OR-ing and redundant power switche
Otros transistores... IRF9410PBf , IRF9520NPBF , IRF9530NLPBF , IRF9910PBF , IRF9952PBF , IRF9953PBF , IRF9956PBF , IRFB4410PBF , IRF630 , IRFB7434PBF , IRFB7437PBF , IRFB7440PBF , IRFB7446PBF , IRFB7530PBF , IRFB7546PBF , IRFB7730PBF , IRFB7734PBF .
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