IRFB7430PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

StrongIRFETTMIRFB7430PbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsD VDSS 40Vl Battery powered circuitsRDS(on) typ. 1.0ml Half-bridge and full-bridge topologiesl Synchronous rectifier applications max. 1.3mGl Resonant mode power suppliesID (Silicon Limited) 409Al OR-ing and redundant power switchesSID (

StrongIRFETTMIRFB7430PbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsD VDSS 40Vl Battery powered circuitsRDS(on) typ. 1.0ml Half-bridge and full-bridge topologiesl Synchronous rectifier applications max. 1.3mGl Resonant mode power suppliesID (Silicon Limited) 409Al OR-ing and redundant power switchesSID (

StrongIRFETIRFB7434PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsVDSS 40VDl BLDC Motor drive applicationsRDS(on) typ. 1.25ml Battery powered circuits max. 1.6ml Half-bridge and full-bridge topologiesGl Synchronous rectifier applicationsID (Silicon Limited) 317Al Resonant mode power suppliesSID (Package Limited) 195A l OR-ing and

StrongIRFETIRFB7437PbFHEXFET Power MOSFETApplicationsl Brushed Motor drive applicationsVDSSD 40Vl BLDC Motor drive applicationsRDS(on) typ.1.5m l Battery powered circuitsl Half-bridge and full-bridge topologies max. 2.0m Gl Synchronous rectifier applicationsID (Silicon Limited) 250Al Resonant mode power suppliesSl OR-ing and redundant power switche

StrongIRFETIRFB7437PbFHEXFET Power MOSFETApplicationsl Brushed Motor drive applicationsVDSSD 40Vl BLDC Motor drive applicationsRDS(on) typ.1.5m l Battery powered circuitsl Half-bridge and full-bridge topologies max. 2.0m Gl Synchronous rectifier applicationsID (Silicon Limited) 250Al Resonant mode power suppliesSl OR-ing and redundant power switche

StrongIRFET IRFB7434PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 1.25mBattery powered circuits max 1.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 317A Resonant mode power sup

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB7434IIRFB7434FEATURESStatic drain-source on-resistance:RDS(on) 1.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB7437IIRFB7437FEATURESStatic drain-source on-resistance:RDS(on) 2.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM