IRFB7434PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFB7434PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 294 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 317 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 68 nS
   Cossⓘ - Capacitancia de salida: 1540 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0016 Ohm
   Paquete / Cubierta: TO-220AB

Búsqueda de reemplazo de MOSFET IRFB7434PBF

IRFB7434PBF Datasheet (PDF)

..1. Size:493K infineon
irfb7434pbf.pdf

StrongIRFET IRFB7434PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 1.25mBattery powered circuits max 1.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 317A Resonant mode power sup

6.1. Size:257K international rectifier
irfb7434.pdf

StrongIRFETIRFB7434PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsVDSS 40VDl BLDC Motor drive applicationsRDS(on) typ. 1.25ml Battery powered circuits max. 1.6ml Half-bridge and full-bridge topologiesGl Synchronous rectifier applicationsID (Silicon Limited) 317Al Resonant mode power suppliesSID (Package Limited) 195A l OR-ing and

6.2. Size:246K inchange semiconductor
irfb7434.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB7434IIRFB7434FEATURESStatic drain-source on-resistance:RDS(on) 1.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM

7.1. Size:248K international rectifier
irfb7437.pdf

StrongIRFETIRFB7437PbFHEXFET Power MOSFETApplicationsl Brushed Motor drive applicationsVDSSD 40Vl BLDC Motor drive applicationsRDS(on) typ.1.5m l Battery powered circuitsl Half-bridge and full-bridge topologies max. 2.0m Gl Synchronous rectifier applicationsID (Silicon Limited) 250Al Resonant mode power suppliesSl OR-ing and redundant power switche

7.2. Size:253K international rectifier
irfb7430.pdf

StrongIRFETTMIRFB7430PbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsD VDSS 40Vl Battery powered circuitsRDS(on) typ. 1.0ml Half-bridge and full-bridge topologiesl Synchronous rectifier applications max. 1.3mGl Resonant mode power suppliesID (Silicon Limited) 409Al OR-ing and redundant power switchesSID (

7.3. Size:248K infineon
irfb7437pbf.pdf

7.4. Size:253K infineon
irfb7430pbf.pdf

7.5. Size:246K inchange semiconductor
irfb7437.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB7437IIRFB7437FEATURESStatic drain-source on-resistance:RDS(on) 2.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: