IRFB7434PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFB7434PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 294 W
Voltaje máximo drenador - fuente |Vds|: 40 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 317 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3.9 V
Carga de la puerta (Qg): 216 nC
Tiempo de subida (tr): 68 nS
Conductancia de drenaje-sustrato (Cd): 1540 pF
Resistencia entre drenaje y fuente RDS(on): 0.0016 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de MOSFET IRFB7434PBF
IRFB7434PBF Datasheet (PDF)
irfb7434pbf.pdf
StrongIRFET IRFB7434PbF HEXFET Power MOSFET Application Brushed Motor drive applications VDSS 40V D BLDC Motor drive applications RDS(on) typ. 1.25mBattery powered circuits max 1.6m Half-bridge and full-bridge topologies G Synchronous rectifier applications ID (Silicon Limited) 317A Resonant mode power sup
irfb7434.pdf
StrongIRFETIRFB7434PbFApplicationsHEXFET Power MOSFETl Brushed Motor drive applicationsVDSS 40VDl BLDC Motor drive applicationsRDS(on) typ. 1.25ml Battery powered circuits max. 1.6ml Half-bridge and full-bridge topologiesGl Synchronous rectifier applicationsID (Silicon Limited) 317Al Resonant mode power suppliesSID (Package Limited) 195A l OR-ing and
irfb7434.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB7434IIRFB7434FEATURESStatic drain-source on-resistance:RDS(on) 1.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIM
irfb7437.pdf
StrongIRFETIRFB7437PbFHEXFET Power MOSFETApplicationsl Brushed Motor drive applicationsVDSSD 40Vl BLDC Motor drive applicationsRDS(on) typ.1.5m l Battery powered circuitsl Half-bridge and full-bridge topologies max. 2.0m Gl Synchronous rectifier applicationsID (Silicon Limited) 250Al Resonant mode power suppliesSl OR-ing and redundant power switche
irfb7430.pdf
StrongIRFETTMIRFB7430PbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsD VDSS 40Vl Battery powered circuitsRDS(on) typ. 1.0ml Half-bridge and full-bridge topologiesl Synchronous rectifier applications max. 1.3mGl Resonant mode power suppliesID (Silicon Limited) 409Al OR-ing and redundant power switchesSID (
irfb7437pbf.pdf
StrongIRFETIRFB7437PbFHEXFET Power MOSFETApplicationsl Brushed Motor drive applicationsVDSSD 40Vl BLDC Motor drive applicationsRDS(on) typ.1.5m l Battery powered circuitsl Half-bridge and full-bridge topologies max. 2.0m Gl Synchronous rectifier applicationsID (Silicon Limited) 250Al Resonant mode power suppliesSl OR-ing and redundant power switche
irfb7430pbf.pdf
StrongIRFETTMIRFB7430PbFApplicationsl Brushed Motor drive applicationsHEXFET Power MOSFETl BLDC Motor drive applicationsD VDSS 40Vl Battery powered circuitsRDS(on) typ. 1.0ml Half-bridge and full-bridge topologiesl Synchronous rectifier applications max. 1.3mGl Resonant mode power suppliesID (Silicon Limited) 409Al OR-ing and redundant power switchesSID (
irfb7437.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFB7437IIRFB7437FEATURESStatic drain-source on-resistance:RDS(on) 2.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM
Otros transistores... FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
