IRFB7734PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFB7734PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 290 W
Voltaje máximo drenador - fuente |Vds|: 75 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 183 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3.7 V
Carga de la puerta (Qg): 180 nC
Tiempo de subida (tr): 123 nS
Conductancia de drenaje-sustrato (Cd): 816 pF
Resistencia entre drenaje y fuente RDS(on): 0.0035 Ohm
Paquete / Cubierta: TO-220AB
Búsqueda de reemplazo de MOSFET IRFB7734PBF
IRFB7734PBF Datasheet (PDF)
irfb7734pbf irfs7734pbf irfsl7734pbf.pdf
StrongIRFET IRFB7734PbF IRFS7734PbF IRFSL7734PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.5m Resonant mode power supp
irfb7734 irfs7734pbf irfsl7734pbf.pdf
StrongIRFET IRFB7734PbF IRFS7734PbF IRFSL7734PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.8m Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.5m Resonant mode power supp
irfb7734.pdf
isc N-Channel MOSFET Transistor IRFB7734,IIRFB7734FEATURESStatic drain-source on-resistance:RDS(on) 3.5mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous Rectifier applicationsResonant mode power suppliesBattery powered circuitsABSOL
irfb7730 irfs7730pbf irfsl7730pbf.pdf
StrongIRFET IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.2m Half-bridge and full-bridge topologies max 2.6mG Synchronous rectifier applications ID (Silicon Limited) 246A
irfb7730pbf irfs7730pbf irfsl7730pbf.pdf
StrongIRFET IRFB7730PbF IRFS7730PbF IRFSL7730PbF HEXFET Power MOSFET Application Brushed motor drive applications VDSS 75V D BLDC motor drive applications Battery powered circuits RDS(on) typ. 2.2m Half-bridge and full-bridge topologies max 2.6mG Synchronous rectifier applications ID (Silicon Limited) 246A
irfb7730.pdf
isc N-Channel MOSFET Transistor IRFB7730,IIRFB7730FEATURESStatic drain-source on-resistance:RDS(on) 2.6mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSynchronous Rectifier applicationsResonant mode power suppliesBattery powered circuitsABSOL
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
